TITLE

Mobility anisotropy in InSb/Al[sub x]In[sub 1-x]Sb single quantum wells

AUTHOR(S)
Ball, M. A.; Keay, J. C.; Chung, S. J.; Santos, M. B.; Johnson, M. B.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2138
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology.
ACCESSION #
6358323

 

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