Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films

Mikhelashvili, V.; Eisenstein, G.; Edelmann, F.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2156
Academic Journal
We report properties of Er[sub 2]O[sub 3] films deposited on silicon using electron-beam gun evaporation. We describe the evolution with thickness and annealing temperature of the morphology, structure, and electrical characteristics. An effective relative dielectric constant in the range of 6-14, a minimum leakage current density of 1-2 x 10[sup -8] A/cm² at an electric field of 10[sup 6] V/cm and breakdown electric field of 0.8-1.7 x 10[sup 7] V/cm are demonstrated. Breakdown electric field and leakage current densities are correlated with the surface morphology. The obtained characteristics make the Er[sub 2]O[sub 3] films a promising substitute for SiO[sub 2] as an ultrathin gate dielectric.


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