Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Kim, T. W.; Choo, D. C.; Shim, J. H.; Kang, S. O.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2168
Academic Journal
A focused-ion-beam (FIB) technique utilizing both lithographic and nanoparticle formation processes has been introduced to fabricate a single-electron transistor (SET) that can operate at room temperature. The results for the drain current as a function of the gate voltage at different source voltages at room temperature clearly show Coulomb oscillations indicative of Coulomb-blockade effects. These results indicate that SETs operating at room temperature, fabricated utilizing the FIB technique, hold promise for potential applications in ultra-high-density memory devices.


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