Electron-phonon resonance in InAs/GaSb type-II laser heterostructures

Kisin, M. V.; Stroscio, M. A.; Belenky, G.; Luryi, S.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2174
Academic Journal
The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/ GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displaced from the center of the Brillouin zone due to the asymmetry of the InAs/GaSb double quantum well heterostructure.


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