TITLE

Tunable negative differential resistance controlled by spin blockade in single-electron transistors

AUTHOR(S)
Ciorga, M.; Pioro-Ladriere, M.; Zawadzki, P.; Hawrylak, P.; Sachrajda, A. S.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2177
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot.
ACCESSION #
6358310

 

Related Articles

  • Comparison of magnetocurrent and transfer ratio in magnetic tunnel transistors with spin-valve bases containing Cu and Au spacer layers. van Dijken, Sebastiaan; Jiang, Xin; Parkin, Stuart S. P. // Applied Physics Letters;2/3/2003, Vol. 82 Issue 5, p775 

    The magnetocurrent of magnetic tunnel transistors with spin-valve base structures is found to be nearly insensitive to whether the spacer layer material in the spin valve is Cu or Au. By contrast, the in-plane magnetoresistance of the same spin valves differs by almost a factor of two....

  • Transfer ratio of the spin-valve transistor. van ’t Erve, O. M. J.; Vlutters, R.; Kumar, P. S. Anil; Kim, S. D.; Postma, F. M.; Jansen, R.; Lodder, J. C. // Applied Physics Letters;5/20/2002, Vol. 80 Issue 20, p3787 

    We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base...

  • A SINGLE-SPIN TRANSISTOR. Schewe, Phillip F. // Physics Today;Aug2002, Vol. 55 Issue 8, p9 

    Discusses the result of a study conducted by physicists on a single-spin transistor. Factors that influence the total spin of the electronics; Approach used in controlling the spin state of the dot.

  • Theory of semiconductor magnetic bipolar transistors. Flatté, M. E.; Yu, Z. G.; Johnston-Halperin, E.; Awschalom, D. D. // Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4740 

    Bipolar transistors with a ferromagnetic base are shown theoretically to have the potential to generate almost 100% spin-polarized current injection into nonmagnetic semiconductors. Optical control of ferromagnetism and spin splitting in the base can lead to either long-lived or ultrafast...

  • Spin-torque transistor. Bauer, Gerrit E. W.; Brataas, Arne; Tserkovnyak, Yaroslav; van Wees, Bart J. // Applied Physics Letters;6/2/2003, Vol. 82 Issue 22, p3928 

    A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a...

  • Reexamination of some spintronic field-effect device concepts. Bandyopadhyay, S.; Cahay, M. // Applied Physics Letters;8/23/2004, Vol. 85 Issue 8, p1433 

    Current interest in spintronics is largely motivated by a belief that spin-based devices (e.g., spin field-effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin-orbit...

  • P-wave-enhanced Spin Field Effect Transistor and Recent Patents. Ming-Hong Gau; Ikai Lo; Wan-Tsang Wang; Jih-Chen Chiang; Mitch Ming-Chi Chou // Recent Patents on Nanotechnology;Nov2007, Vol. 1 Issue 3, p169 

    Abstract: P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys. Lett....

  • Are spin junction transistors suitable for signal processing? Bandyopadhyay, S.; Cahay, M. // Applied Physics Letters;3/28/2005, Vol. 86 Issue 13, p133502 

    A number of spintronic analogs of bipolar junction transistors have been proposed for signal processing applications. Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing. They may also have poor isolation between...

  • Room-temperature organic-based spin polarizer. Li, Bin; Kao, Chi-Yueh; Lu, Yu; Yoo, Jung-Woo; Prigodin, Vladimir N.; Epstein, Arthur J. // Applied Physics Letters;10/10/2011, Vol. 99 Issue 15, p153503 

    We report a magnetic tunnel junction operating at room-temperature with organic magnetic semiconductor V[TCNE]x (x ∼ 2, TCNE: tetracyanoethylene) and Fe as the spin polarizer and analyzer while 10 nm rubrene layer serves as the tunnel barrier between them. At room-temperature, the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics