Tunable negative differential resistance controlled by spin blockade in single-electron transistors

Ciorga, M.; Pioro-Ladriere, M.; Zawadzki, P.; Hawrylak, P.; Sachrajda, A. S.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2177
Academic Journal
The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot.


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