TITLE

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

AUTHOR(S)
Naranjo, F. B.; Ferna´ndez, S.; Sa´nchez-Garcı´a, M. A.; Calle, F.; Calleja, E.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2198
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A resonant-cavity InGaN/GaN multiple-quantum-well (MQW) light-emitting diode, incorporating a semitransparent Bragg reflector, has been grown by molecular-beam epitaxy. A 30% reflectivity AlGaN/GaN distributed Bragg reflector and a Ni coating were used as bottom and top mirrors, for backside emission. High-resolution x-ray diffraction data reveal high-quality interfaces in both the MQW and the Bragg mirror. Room-temperature electroluminescence is centered at 507 nm, with an estimated output power of 5 µW at 20 mA. The external efficiency is increased by a factor of 12 compared to similar structures without resonant cavity.
ACCESSION #
6358302

 

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