TITLE

Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb[sup 3+] phosphor

AUTHOR(S)
Richardson, H. H.; Van Patten, P. G.; Richardson, D. R.; Kordesch, M. E.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An alternating current thin-film electroluminescent device has been constructed on a flexible polymer substrate using an amorphous AlN:Tb[sup 3+] film as the phosphor. When the device is operated at 170 Vac and at a frequency of 1 kHz, a stripe of green light can be seen emanating from the 0.6 mm x 14 mm active area. The electroluminescence spectrum from the device is very similar to the cathodoluminescence and photoluminescence spectra from the amorphous AlN:Tb[sup 3+] phosphor. Luminance for this phosphor on plastic substrates is about 1 cd/m² under optimal conditions. Time-resolved photoluminescence measurements were used to gain insight into the nature of the Tb[sup 3+] excited states. The relatively slow (τ=850 µs), single exponential decay of the excited state suggests that quenching via excited state energy migration to trap sites in the semiconductor is negligible.
ACCESSION #
6358299

 

Related Articles

  • Development of high-performance blue–violet-emitting organic electroluminescent devices. Okumoto, Kenji; Shirota, Yasuhiko // Applied Physics Letters;8/27/2001, Vol. 79 Issue 9, p1231 

    Two high-performance blue-violet-emitting organic electroluminescent devices with electroluminescence peaking at 404 and 415 nm were developed using a hole-blocking amorphous molecular material, 1,3,5-tris(4-fluorobiphenyl-4′-yl)benzene, and emitting amorphous molecular materials, N,N[sup...

  • Numerical analysis of a thin microcyrstalline p layer in p-i-n a-Si:H solar cells. Topic, Marko; Smole, Franc; Furlan, Joze // Journal of Applied Physics;4/15/1998, Vol. 83 Issue 8, p4518 

    Provides information on a study examination the function of a thin microcrystalline p(...c-SiH) layer in a p-i-n hydrogenated amorphous silicon (a-Si:H) based solar cell. Methodology used to conduct the study; Information on circumstances at the ZNO/p front contact heterozygosity; Detailed...

  • Transport and structural modification during nitrogen implantation of hard amorphous carbon films. Grigull, S.; Jacob, W.; Henke, D.; Spaeth, C.; Sümmchen, L.; Sigle, W. // Journal of Applied Physics;5/15/1998, Vol. 83 Issue 10, p5185 

    Provides information on an experiment involving the implantation of hard amorphous carbon (ta-C) films with 20 keV N+ ions with different fluences up to 6x1017/cm 2 at different substrate temperatures. Methodology used to conduct the experiment; Preparation of thin films of ta-C of typically...

  • The growth of pinhole-free epitaxial DySi2-x films on atomically clean Si(111). Shen, G.H.; Chen, J.C. // Journal of Applied Physics;10/1/1998, Vol. 84 Issue 7, p3630 

    Examines the implementation of a scheme, taking into account the formation of amorphous interlayer, to grown pinhole-free DySi2-x films. Discusses the mechanism for pinhole formation; Mechanisms proposed for the formation of pinholes; Method used for determining the appropriate thickness of...

  • X-ray diffraction studies of the effects of N incorporation in amorphous CNx materials. Walters, J.K.; Kuhn, M.; Spaeth, C.; Dooryhee, E.; Newport, R.J. // Journal of Applied Physics;4/1/1998, Vol. 83 Issue 7, p3529 

    Details the X-ray diffraction study of the effects of N incorporation in amorphous CNx materials. Observations made in study; Use of experimental data in study; Indications of the results of study; What results of study are consistent with.

  • Schott Fostec unveils universal light.  // Business Journal (Central New York);2/21/2003, Vol. 17 Issue 8, p18 

    Reports on the development of a Universal Light Source using DC power by Schott Fostec in New York.

  • Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices. Hitt, J. C.; Keir, P. D.; Wager, J. F.; Sun, S. S. // Journal of Applied Physics;1/15/1998, Vol. 83 Issue 2, p1141 

    Presents a study on the static space charge in evaporated ZnS. details on the alternating-current thin film electroluminescent devices. Information on the presence of the positive space charge; Methodology used to obtain results of voltage pulse; Information on the differentiation of external...

  • Semiconductors.  // Electronic News (10616624);1/6/97, Vol. 43 Issue 2149, p16 

    Presents a diagram of Planar America's RGB color active matrix electroluminescent (AMEL) structure. Low-power, light weight and emissive characteristics; Thin-film single-crystal silicon-on-insulator wafers.

  • Doping effects in organic electroluminescent devices. Yang, Jie; Shen, Jun // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p2105 

    Focuses on the study of several doping effects in organic electroluminescent devices, within a framework of the trap-charge limited conduction models. Information on the conductivity of the organic materials; Reference to the complete energy and charge profiles; Proposal of an experimental...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics