Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb[sup 3+] phosphor

Richardson, H. H.; Van Patten, P. G.; Richardson, D. R.; Kordesch, M. E.
March 2002
Applied Physics Letters;3/25/2002, Vol. 80 Issue 12, p2207
Academic Journal
An alternating current thin-film electroluminescent device has been constructed on a flexible polymer substrate using an amorphous AlN:Tb[sup 3+] film as the phosphor. When the device is operated at 170 Vac and at a frequency of 1 kHz, a stripe of green light can be seen emanating from the 0.6 mm x 14 mm active area. The electroluminescence spectrum from the device is very similar to the cathodoluminescence and photoluminescence spectra from the amorphous AlN:Tb[sup 3+] phosphor. Luminance for this phosphor on plastic substrates is about 1 cd/m² under optimal conditions. Time-resolved photoluminescence measurements were used to gain insight into the nature of the Tb[sup 3+] excited states. The relatively slow (τ=850 µs), single exponential decay of the excited state suggests that quenching via excited state energy migration to trap sites in the semiconductor is negligible.


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