TITLE

Thermodynamic stability of high-K dielectric metal oxides ZrO[sub 2] and HfO[sub 2] in contact with Si and SiO[sub 2]

AUTHOR(S)
Gutowski, Maciej; Jaffe, John E.; Liu, Chun-Li; Stoker, Matt; Hegde, Rama I.; Rai, Raghaw S.; Tobin, Philip J.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1897
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present theoretical and experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO[sub 2] and HfO[sub 2] in contact with Si and SiO[sub 2]. The HfO[sub 2]/Si interface is found to be stable with respect to formation of silicides whereas the ZrO[sub 2]/Si interface is not. The metal-oxide/SiO[sub 2] interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polycrystalline silicon/ZrO[sub 2]/Si interfaces but not for the interfaces with HfO[sub 2]. For both ZrO[sub 2] and HfO[sub 2], the x-ray photoemission spectra illustrate formation of silicate-like compounds in the MO[sub 2]/SiO[sub 2] interface.
ACCESSION #
6327708

 

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