TITLE

GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode

AUTHOR(S)
Jeon, Seong-Ran; Oh, Chang Sok; Yang, Jeon-Wook; Yang, Gye Mo; Yoo, Byueng-Su
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1933
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated surface-emitting GaN-based diodes with a buried tunnel junction (TJ) current aperture. The current confinement aperture for lateral injection current was defined by mesa etch of a TJ structure and regrowth of current blocking layer surrounding the TJ mesa. Lateral electron current drives a tunnel contact junction providing hole injection into the active region. The very uniform light emission just through a buried TJ aperture represents that the buried TJ structure acts very effectively as a confinement aperture of lateral current injection, particularly in GaN-based vertical-cavity surface-emitting lasers.
ACCESSION #
6327695

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics