TITLE

Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm

AUTHOR(S)
Biermann, K.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.; Ku¨nzel, H.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1936
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The ultrafast optical response of low-temperature-grown GalnAs/AlInAs multiple quantum wells is studied in pump-probe experiments with a femtosecond Er:fiber laser. As-grown samples doped with beryllium (concentration of 8 x 10[sup 17] cm[sup -3]) display a nonlinear transmission change, which decays by carrier trapping with a time constant of 230 fs. Experiments with pairs of ultrashort pulses separated by 1.5 ps demonstrate a fast modulation of transmission and very small accumulation effects, making this material highly promising for all-optical switching. Substantially longer recovery times are found in annealed, Be-doped samples and in undoped samples.
ACCESSION #
6327694

 

Related Articles

  • Parameter-dependent third-order optical nonlinearity in a CdSe/ZnS quantum dot quantum well in the vicinity of a gold nanoparticle. Liu, X. N.; Yao, D. Z. // European Physical Journal B -- Condensed Matter;Nov2010, Vol. 78 Issue 1, p95 

    The nonlinear optical properties of the CdSe/ZnS quantum dot quantum well (QDQW) in the vicinity of a spherical metal nano-particle (MNP) have been described. The third-order nonlinear optical susceptibility induced by the transition between E (inside the well) and E (outside the well) has been...

  • Short-pulse wavelengths shifting by four wave mixing in passive InGaAsP/InP waveguides. Darwish, A.M.; Ippen, E.P. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2038 

    Demonstrates wavelength conversion in the 1.5 micrometer regime using the near band gap nonlinearity of semiconductor quantum wells. Advantage of the wavelength; Confirmation of the ultrafast nature of the nonlinearity by measuring the conversation; Observation of the increase of magnitude in...

  • Optical properties of quantum steps. Shen, H.; Pollak, Fred H.; Tsu, Raphael // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p13 

    We have developed a method to calculate the density of states of quantum steps which allows us to sum the optical transitions for the determination of optical properties. We have demonstrated that quantum steps introduce quasistationary states. The calculated peaks agree well with the...

  • Optical nonlinear responses of a quantum well photodiode with a non-ohmic contact. Abe, Yuji; Tokuda, Yasunori // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1664 

    Investigates the dependence of photocurrent properties on incident optical power in a quantum well photodiode with a nonohmic contact. Mechanism for the optical nonlinear responses; Ways of creating novel optoelectronic devices; Use of built-in field screening to obtain optical nonlinearities.

  • Measurements of room-temperature band-gap-resonant optical nonlinearities of GaAs/AlGaAs multiple quantum wells and bulk GaAs. Park, S. H.; Morhange, J. F.; Jeffery, A. D.; Morgan, R. A.; Chavez-Pirson, A.; Gibbs, H. M.; Koch, S. W.; Peyghambarian, N.; Derstine, M.; Gossard, A. C.; English, J. H.; Weigmann, W. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1201 

    We present a systematic study of the dependence of the optical nonlinearities on quantum well thickness for GaAs/AlGaAs multiple quantum wells (MQW’s) at room temperature and compare them with bulk GaAs. The maximum change in the refractive index is greatest for the MQW’s with the...

  • Quantum tailoring of optical transitions in In[sub x]Ga[sub 1-x]As/AlAs strained quantum wells. Jancu, Jean Marc; Pellegrini, Vittorio; Colombelli, Raffaele; Beltram, Fabio; Mueller, Bernhard; Sorba, Lucia; Franciosi, Alfonso // Applied Physics Letters;11/2/1998, Vol. 73 Issue 18 

    The optical properties of n-doped In[sub x]Ga[sub 1-x]As/AlAs pseudomorphic quantum wells grown on GaAs(001) are investigated as a function of layer thickness and indium concentration. The nature of interband and intersubband transitions is clarified using an improved tight-binding model and a...

  • Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells. Chuo, C.-C.; Chuo, C.-C; Lee, C.-M.; Nee, T.-E.; Nee, T.-E; Chyi, J.-I. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Postgrowth thermal annealing was applied to investigate the optical and structural properties of In[sub x]Ga[sub 1-x]N/GaN multiple quantum wells with high InN mole fraction. Thermal annealing at 900 °C results in a twentyfold increase of the integrated photoluminescence intensity....

  • Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces. Droopad, R.; Puechner, R.A. // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1777 

    Studies the optical properties of single strained InGaAs/GaAs quantum wells grown on vicinal GaAs surfaces. Photoluminescence; Density of optically inactive traps; Optical efficiency.

  • The optical processes in AlInP/GaInP/AlInP quantum wells. Ishitani, Yoshihiro; Minagawa, Shigekazu; Kita, Takashi; Nishino, Taneo; Yaguchi, Hiroyuki; Shiraki, Yasuhiro // Journal of Applied Physics;10/15/1996, Vol. 80 Issue 8, p4592 

    Provides information on a study that examined the optical processes in AlInP/GaInP/AlInP quantum wells free from long-range ordering by photoluminescence, photoluminescence excitation and photoreflectance measurements. Methodology of the study; Results and discussion on the study.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics