TITLE

Explanation for the temperature dependence of the gate current in metal-oxide-semiconductor transistors

AUTHOR(S)
Ghetti, Andrea
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1939
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature dependence of hot-electron induced gate current in metal-oxide-semiconductor transistors is investigated by means of Monte Carlo simulation. The Monte Carlo model features an approach to the short range Coulomb interaction that provides a better statistical enhancement of "rare" short range electron-electron scattering (EES) events allowing a much better estimate of the distribution function at high energy. It is demonstrated that the gate current temperature dependence is due to EES. In particular, it is shown that EES efficiency in pushing carrier towards higher energy is independent of the lattice temperature. Therefore, reducing the temperature the number of carriers with energy near the applied drain voltage increases because of the reduced phonon scattering. Thus, a larger number of carriers are pushed by EES above the Si/SiO[sub 2] energy barrier for lower lattice temperature.
ACCESSION #
6327693

 

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