TITLE

Density of states of P[sub b1] Si/SiO[sub 2] interface trap centers

AUTHOR(S)
Campbell, J. P.; Lenahan, P. M.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1945
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic properties of the (100) Si/SiO[sub 2] interfacial defect called P[sub b1] are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the P[sub b1] defects have levels in the silicon band gap, (2) that the P[sub b1] correlation energy is significantly smaller than that of the P[sub b1] defect, and (3) that the P[sub b1] levels are skewed toward the lower part of the silicon band gap.
ACCESSION #
6327691

 

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