TITLE

Generalized Einstein relation for disordered semiconductors—implications for device performance

AUTHOR(S)
Roichman, Yohai; Tessler, Nir
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1948
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasiequilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel width in field-effect transistors is discussed.
ACCESSION #
6327690

 

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