TITLE

Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiO[sub x], Al[sub 2]O[sub 3], and ZrO[sub 2]

AUTHOR(S)
Stesmans, A.; Afanas’ev, V. V.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1957
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electron spin resonance on (100)Si/SiO[sub x]/ZrO[sub 2] and (100)Si/A1[sub 2]O[sub 3]/ZrO[sub 2] stacks with nm-thin dielectric layers reveals the Si dangling-bond-type centers P[sub b0], P[sub b1] as prominent defects at the (100)Si/dielectric interface. This P[sub b0], P[sub b1] fingerprint indicates that, while gratifying for the Si/SiO[sub x]/ZrO[sub 2] case, the as-deposited (100)Si/A1[sub 2]O[sub 3] interface is basically Si/SiO[sub 2]-1ike. The interfaces are in an enhanced (unrelaxed) stress state, characteristic of low-temperature Si/SiO[sub 2] growth. Based on the P[sub b0], P[sub bl] criterion, standard thermal Si/SiO[sub 2] interface properties may be approached by appropriate annealing (≥ 650 °C) in vacuum in the case of Si/SiO[sub x]/ZrO[sub 2]. Yet, O[sub 2] ambient is required for Si/Al[sub 2]O[sub 3], indicating that the initial abruptness of the interface prevents thermal adaptation to occur until an additional SiO[sub x] interlayer grows. A minimal SiO[sub x] interlayer thickness (...0.5 nm) appears requisite.
ACCESSION #
6327687

 

Related Articles

  • Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si. Kang, A.Y.; Lenahan, P.M.; Conley Jr, J.F // Applied Physics Letters;10/20/2003, Vol. 83 Issue 16, p3407 

    We observed two paramagnetic defects in thin films of HfO[sub 2] on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O[sub 2][sup -] defect. A second spectrum is likely due to an Hf[sup...

  • Photoinduced paramagnetic centers in amorphous silicon oxynitride. Yount, J. T.; Kraus, G. T.; Lenahan, P. M.; Krick, D. T. // Journal of Applied Physics;11/1/1991, Vol. 70 Issue 9, p4969 

    Reports on the pre- and post-illumination electron spin resonance observations of various oxynitride compositions. Preparation of the oxynitride films; Experimental results.

  • Enhanced sensitivity for high-pressure EPR using dielectric resonators. Bromberg, Steven E.; Chan, I. Y. // Review of Scientific Instruments;Jul1992, Vol. 63 Issue 7, p3670 

    We present a modified Merrill–Bassett diamond anvil cell for performing electron paramagnetic resonance (EPR) experiments under high pressure. The design centers on two mutually coupled TiO2 dielectric resonators mounted close to the diamonds. This configuration produces a tangential...

  • Comparison of defect structure in N2O- and NH3-nitrided oxide dielectrics. Yount, J. T.; Lenahan, P. M.; Krick, J. T. // Journal of Applied Physics;8/1/1994, Vol. 76 Issue 3, p1754 

    Focuses on a study which compared and identified the point defects of nitrogen dioxide-nitrided, ammonium-nitrided and conventional silicon dioxide films using electron spin resonance. Background on the different nitrogen incorporation methods; Advantages of nitrogen dioxide-nitrous oxide...

  • Transparent miniature dielectric resonator for electron paramagnetic resonance experiments. Blank, Aharon; Stavitski, Eli; Levanon, Haim; Gubaydullin, Firdus // Review of Scientific Instruments;May2003, Vol. 74 Issue 5, p2853 

    Presents a novel miniature dielectric resonator for X-band electron paramagnetic resonance experiments. Features of the resonator based on a single crystal of KTaO[sub 3]; Consideration of several configurations of resonators; Presentation of the findings in terms of both experimental and...

  • Shape of the magnetic resonance line in a thin film on the surface of an anisotropic superconductor. Efremova, S. A.; Tsarevskii, S. L. // Physics of the Solid State;Mar99, Vol. 41 Issue 3, p347 

    The shape of the EPR line in a thin (=?/2, where ? is the London penetration depth of the magnetic field in the superconductor) paramagnetic film deposited on the surface of an anisotropic superconductor is calculated in an oblique magnetic field with allowance for the inhomogeneity of the local...

  • Electron paramagnetic resonance forbidden transitions from hydrogen in polycrystalline diamond.... Holder, S.L.; Rowan, L.G. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1091 

    Investigates the polycrystalline diamond films by electron paramagnetic resonance. Importance of determining the presence of hydrogen in diamond films; List of reactant species used in the deposition of the film; Components of the film.

  • Spin exchange in iodine-doped polydiacetylene. Kerimov, M. K. // Physics of the Solid State;Oct99, Vol. 41 Issue 10, p1726 

    It is shown that the observed transformation of the ESR spectrum in polydiacetylene films upon doping with iodine agrees with an exchange interaction between the spin systems of localized paramagnetic centers (S) and polaron states (P) by means of which current-carrier transport occurs. The data...

  • Influence of defects on electron emission from diamond films. Show, Yoshiyuki; Matsuoka, Fumihiko // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6351 

    Studies the correlation between paramagnetic defects and the electron emission in diamond films which were deposited by the chemical vapor deposition method using electron-spin-resonance (ESR) and field-emission measurements. Details of the experiment; Why the diamond surface in the study has...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics