Si dangling-bond-type defects at the interface of (100)Si with ultrathin layers of SiO[sub x], Al[sub 2]O[sub 3], and ZrO[sub 2]

Stesmans, A.; Afanas’ev, V. V.
March 2002
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1957
Academic Journal
Electron spin resonance on (100)Si/SiO[sub x]/ZrO[sub 2] and (100)Si/A1[sub 2]O[sub 3]/ZrO[sub 2] stacks with nm-thin dielectric layers reveals the Si dangling-bond-type centers P[sub b0], P[sub b1] as prominent defects at the (100)Si/dielectric interface. This P[sub b0], P[sub b1] fingerprint indicates that, while gratifying for the Si/SiO[sub x]/ZrO[sub 2] case, the as-deposited (100)Si/A1[sub 2]O[sub 3] interface is basically Si/SiO[sub 2]-1ike. The interfaces are in an enhanced (unrelaxed) stress state, characteristic of low-temperature Si/SiO[sub 2] growth. Based on the P[sub b0], P[sub bl] criterion, standard thermal Si/SiO[sub 2] interface properties may be approached by appropriate annealing (≥ 650 °C) in vacuum in the case of Si/SiO[sub x]/ZrO[sub 2]. Yet, O[sub 2] ambient is required for Si/Al[sub 2]O[sub 3], indicating that the initial abruptness of the interface prevents thermal adaptation to occur until an additional SiO[sub x] interlayer grows. A minimal SiO[sub x] interlayer thickness (...0.5 nm) appears requisite.


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