TITLE

Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates

AUTHOR(S)
Sugahara, Satoshi; Tanaka, Masaaki
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1969
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated fully epitaxial single-crystal MnAs/A1As/MnAs magnetic tunnel junctions (MTJs) grown by molecular-beam epitaxy on vicinal GaAs(lll)B substrates. After the bottom MnAs layer was grown at 250 °C, the successive AlAs tunnel barrier and the top MnAs layer were grown at a lower temperature of 200 °C in order to suppress the surface segregation of Mn atoms. High-resolution transmission electron microscopy revealed that a monocrystalline MnAs/A1As/ MnAs trilayer heterostructure with atomically flat and chemically abrupt interfaces was realized. Tunneling magnetoresistance (TMR) was clearly observed in fully epitaxal MTJs made up of this trilayer heterostructure. The TMR ratio was 1.4% at 10 K and it decreased with increasing the bias voltage and with increasing temperature, but the TMR effect still remained at room temperature.
ACCESSION #
6327683

 

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