Polarity effect on the temperature dependence of leakage current through HfO[sub 2]/SiO[sub 2] gate dielectric stacks

Xu, Zhen; Houssa, Michel; De Gendt, Stefan; Heyns, Marc
March 2002
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1975
Academic Journal
A strong polarity effect on the temperature dependence of the leakage current in TiN/HfO[sub 2]/SiO[sub 2]/Si capacitors is reported. A model is proposed to explain these experimental results that combines tunneling through the stack and Frenkel-Poole hopping in the HfO[sub 2] layer, depending on the value of the gate voltage. It is shown that the polarity effect most probably results from the anisotropy of the band diagram of the HfO[sub 2]/SiO[sub 2] stack, as well as from the location of the shallow traps with respect to the conduction band of the HfO[sub 2] layer. Comparison of the model with the experimental results allows an estimate of the trap depth to be between 0.5 and 0.8 eV.


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