Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films

Taylor, T. R.; Hansen, P. J.; Acikel, B.; Pervez, N.; York, R. A.; Streiffer, S. K.; Speck, J. S.
March 2002
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1978
Academic Journal
Barium strontium titanate thin films were deposited by sputtering on Pt/SiO[sub 2] structures using five different host substrates: magnesium oxide, strontium titanate, sapphire, silicon, and vycor glass. These substrates were chosen to provide a systematic change in thermal strain while maintaining the same film microstructure. All films have a weakly textured microstructure. Temperature dependent dielectric measurements from 100-500 K determined that decreasing thermal expansion coefficient of the host substrate (i.e., larger tensile thermal strain) reduced the film dielectric permittivity. The experimentally determined Curie-Weiss temperature decreased with increasing tensile thermal strain and the Curie-Weiss constant increased with tensile strain as predicted by Pertsev et al.


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