Effect of annealing temperature on physical and electrical properties of Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] thin films on Al[sub 2]O[sub 3]-buffered Si

Sun, Chia-Liang; Chen, San-Yuan; Chen, Shi-Bai; Chin, Albert
March 2002
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1984
Academic Journal
The effect of annealing temperature, especially at high temperatures, on the physical and electrical properties of Bi[sub 3.25]La[sub 0.75]Ti[sub 3]O[sub 12] (BLT) thin films on A1[sub 2]O[sub 3] (10 nm)/Si has been investigated. The width of memory window in capacitance-voltage curves for BLT/A1[sub 2]O[sub 3]/Si capacitors annealed at temperature range of 700 °C-950 °C increases with increasing annealing temperature. At the highest annealing temperature of 950 °C, a large ferroelectric memory window of 13 V is obtained under ± 15 V sweep voltage, and this large ferroelectric memory window should be related to the reduced leakage current. Owing to the excellent electrical properties, the high-temperature stable BLT/A1[sub 2]O[sub 3]/Si capacitor is compatible with current very large scale integrated technology process.


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