Spontaneous vacancy array formation on FeSi[sub 2] and CoSi[sub 2] formed on Si(100) 2×n surface

Wang, Jun-Zhong; Jia, Jin-Feng; Liu, Hong; Li, Jian-Long; Liu, Xi; Xue, Qi-Kun
March 2002
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1990
Academic Journal
Atomic structure of FeSi[sub 2] or CoSi[sub 2] grown on the Si(100) 2xn surface has been investigated by scanning tunneling microscopy. After annealing the Fe or Co covered Si(100) 2xn substrate at ∼800 °C, an ordered adatom vacancy array appears on the nominal 1x1 surface of the formed FeSi[sub 2] or CoSi[sub 2] islands, which has not been observed for silicide on the Si(100)-2xl. Upon further annealing to ∼ll00 °C, the vacancies coalesce into striped domains along one of the <011> directions. These nanostructured features are a result of the Ni impurities, and can be a promising template for fabricating nanodot arrays.


Related Articles

  • Spin-polarized scanning tunneling microscopy on ferromagnets. Wulfhekel, Wulf; Kirschner, Jurgen // Applied Physics Letters;9/27/1999, Vol. 75 Issue 13, p1944 

    Discusses an approach to spin-polarized scanning tunneling microscopy based on the magnetotunnel effect between a ferromagnetic tip and a ferromagnetic sample. Separation of the topographic and spin-dependent parts of the tunnel current by periodically changing the magnetization of the tip in...

  • Use of voltage pulses to detect spin-polarized tunneling. Yamada, T. K.; Bischoff, M. M. J.; Mizoguchi, T.; van Kempen, H. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1437 

    The present letter describes a method to make a spin-polarized scanning tunneling microscopy tip by applying voltage pulses between a W tip and a magnetic sample. This spin-polarized tip has the similar characteristics as an Fe-coated W tip, which was confirmed by observations of...

  • Metal dot structure buried in semiconductor quantum wires fabricated by STM electrically induced modifications. Yamada, S.; Kikutani, T.; Aoki, N.; Hong, C.; Hori, H. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS1095 

    Abstract. We have made a ferromagnetic (Ni) dot structure buried in semiconductor quantum wires by two-step surface modifications with STM. The wire was a type of split-gate, and the hole in which the Ni was buried was in the form of a small reversed cone (200 nm upper diameter and 100 nm...

  • Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning. Arima, Kenta; Endo, Katsuyoshi; Kataoka, Toshihiko; Oshikane, Yasushi; Inoue, Haruyuki; Inouye, Haruyuki; Mori, Yuzo // Applied Physics Letters;1/24/2000, Vol. 76 Issue 4 

    Atomic structures of hydrogen-terminated Si(001) surfaces after HF cleaning are investigated by scanning tunneling microscopy. It is revealed that the surface is macroscopically rough but is composed of terraces and steps. Inside a terrace, 1x1 structures are formed. This corresponds to the...

  • Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope. Hasegawa, Y.; Kiyama, H.; Xue, Q. K.; Sakurai, T. // Applied Physics Letters;5/4/1998, Vol. 72 Issue 18 

    The three-dimensional (3D) island structure was prepared by molecular beam epitaxy for the lattice mismatched InAs/GaAs(001) system and its images showing atomic structure on faceted planes were taken in situ by ultrahigh vacuum scanning tunneling microscopy (STM). The (113), (114), and (215)...

  • Dynamic observation of Si (111) surface using a fast scanning tunneling microscope. Hosaka, Sumio; Hasegawa, Tsuyoshi; Hosoki, Shigeyuki; Takata, Keiji // Applied Physics Letters;7/9/1990, Vol. 57 Issue 2, p138 

    Atomic structures of a Si (111) surface are dynamically observed at a 2 s/frame velocity over a scanning field about 150 Å×150 Å using a fast scanning tunneling microscope (FSTM). A FSTM has been developed and it features a compensation method for probe tip servo position error in...

  • Absorption of gas-phase atomic hydrogen by Si(100): Effect of surface atomic structures. Maeng, Jae Yeol; Kim, Sehun; Jo, S. K.; Fitts, W. P.; White, J. M. // Applied Physics Letters;7/2/2001, Vol. 79 Issue 1, p36 

    The atomic-scale surface structural evolution of Si(100) exposed to gas-phase thermal hydrogen atoms, H(g), has been investigated by scanning tunneling microscopy and temperature-programed desorption mass spectrometry. For the substrate temperature (T[sub s]) between 420 and 530 K, dihydride...

  • Interrelations between the local electronic states and the atomic structures in the Si nanoscale island on Si(111)-(7×7) surface. Negishi, R.; Shigeta, Y. // Journal of Applied Physics;4/15/2003, Vol. 93 Issue 8, p4824 

    We have investigated local electronic states and atomic structures of a self-assembled Si nano-island on Si(111)-(7×7) dimer-adatom-stacking fault (DAS) substrate by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. The normalized differential conductivity...

  • Monatomic step structure on the Si(001) surface. Koo, J.-Y.; Yi, J.-Y.; Hwang, C.; Kim, D.-H.; Lee, G.; Lee, S. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS989 

    Abstract. The atomic structure of the monatomic steps on the Si(001) surface is investigated by scanning tunneling microscopy. The kink at the intersection of the SA and SB steps induces a strong buckling along the rebonded dimer row in the lower terrace. On the upper terrace of the S[sub B]...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics