TITLE

Spontaneous vacancy array formation on FeSi[sub 2] and CoSi[sub 2] formed on Si(100) 2×n surface

AUTHOR(S)
Wang, Jun-Zhong; Jia, Jin-Feng; Liu, Hong; Li, Jian-Long; Liu, Xi; Xue, Qi-Kun
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p1990
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Atomic structure of FeSi[sub 2] or CoSi[sub 2] grown on the Si(100) 2xn surface has been investigated by scanning tunneling microscopy. After annealing the Fe or Co covered Si(100) 2xn substrate at ∼800 °C, an ordered adatom vacancy array appears on the nominal 1x1 surface of the formed FeSi[sub 2] or CoSi[sub 2] islands, which has not been observed for silicide on the Si(100)-2xl. Upon further annealing to ∼ll00 °C, the vacancies coalesce into striped domains along one of the <011> directions. These nanostructured features are a result of the Ni impurities, and can be a promising template for fabricating nanodot arrays.
ACCESSION #
6327676

 

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