Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Choi, W. K.; Chim, W. K.; Heng, C. L.; Teo, L. W.; Ho, Vincent; Ng, V.; Antoniadis, D. A.; Fitzgerald, E. A.
March 2002
Applied Physics Letters;3/18/2002, Vol. 80 Issue 11, p2014
Academic Journal
The memory effect of a trilayer structure (rapid thermal oxide/Ge nanocrystals in SiO[sub 2]/sputtered SiO[sub 2]) was investigated via capacitance versus voltage (C-V) measurements. The Ge nanocrystals were synthesized by rapid thermal annealing of the cosputtered Ge + SiO[sub 2] films. The memory effect was manifested by the hysteresis in the C-V curve. Transmission electron microscope and C-V results indicated that the hysteresis was due to Ge nanocrystals in the middle layer of the trilayer structure.


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