TITLE

The investigation of defect formation in chemical vapor deposited diamond using photoluminescence by ultraviolet synchrotron radiation

AUTHOR(S)
Won, Jaihyung; Hatta, Akimitsu; Ito, Toshimichi; Sasaki, Takatomo; Hiraki, Akio
PUB. DATE
December 1996
SOURCE
Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4179
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence (PL) of microwave assisted chemical vapor deposited (CVD) diamond was obtained using ultraviolet synchrotron radiation. The PL spectrum of the 5RL band (intrinsic defect), which cannot be detected in cathodoluminesence, was observed for both undoped (as grown) and boron doped (200 ppm) CVD diamond. The defect formation was characterized in the thin near-surface layer. The peak of boron related origin (2.3 eV) was detected in the boron doped CVD while band A (2.9 eV) was not observed. After remote hydrogen plasma treatment (RHPT), the near-surface defect related peak in the PL spectra disappeared. During RHPT the diamond was rehybridized by hydrogen radicals without etching. © 1996 American Institute of Physics.
ACCESSION #
6290429

 

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