Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs

Chen, K. M.; Zhang, Y. X.; Qin, G. G.; Jin, S. X.; Wu, K.; Li, C. Y.; Gu, Z. N.; Zhou, X. H.
December 1996
Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3557
Academic Journal
Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.


Related Articles

  • Thermal emission rate of deep localized states in amorphous arsenic triselenide. Naito, Hiroyoshi; Okuda, Masahiro // Journal of Applied Physics;10/15/1993, Vol. 74 Issue 8, p5064 

    Examines deep localized-state distribution in amorphous arsenic triselenide thin films measured with a modulated photocurrent technique. Peak in the deep localized-state distribution; Overview ofthe applied voltage dependence of the phase shift data; Temperature dependence of the thermal...

  • Effects and behavior of arsenic during titanium silicidation by halogen lamp annealing. Okamoto, Tatsuo; Tsukamoto, Katsuhiro; Shimizu, Masahiro; Matsukawa, Takayuki // Journal of Applied Physics;5/1/1987, Vol. 61 Issue 9, p4530 

    Investigates the effects and behavior of arsenic atoms existing in a titanium layer formed on silicon during silicidation by halogen lamp annealing. Experimental procedure; Information on the titanium silicidation on silicon; Lateral growth of the silicide.

  • In situ observation of surface processes in InAs/GaAs(001) heteroepitaxy: The role of As on the growth mode. Ohtake, Akihiro; Ozeki, Masashi // Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p431 

    Surface processes of the growing thin films of InAs on GaAs(001) substrates have been studied as a function of substrate temperature and As to In flux ratio. They have been observed by reflection high-energy electron diffraction and total-reflection-angle x-ray spectroscopy in real time. At...

  • Inhibited oxidation in low-temperature grown GaAs surface layers observed by photoelectron spectroscopy. Ng, T.-B.; Janes, D. B.; McInturff, D.; Woodall, J. M. // Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3551 

    The surface oxidation characteristics of a GaAs layer structure consisting of a thin (10 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a heavily n-doped GaAs layer, both grown by molecular beam epitaxy, have been studied using x-ray photoelectron spectroscopy (XPS). Between the layer...

  • Transient field-effect and time-of-flight investigation of chalcogenide glasses. Khan, Babar A.; Adler, David; Senturia, Stephen D. // Journal of Applied Physics;10/15/1986, Vol. 60 Issue 8, p2875 

    Studies hole transport in amorphous arsenic[sub2]tellurium[sub3] films by time-of-flight and transient field-effect (TFE) measurements. Information on chalcogenide glasses; Measurement configuration for TFE experiments; Equivalent circuit for long thin-film transistors.

  • Effect of Sb composition on lateral oxidation rates in AlAs[sub 1-x]Sb[sub x]. Chavarkar, P.; Mishra, U. K.; Mishra, U.K.; Mathis, S. K.; Mathis, S.K.; Speck, J. S.; Speck, J.S. // Applied Physics Letters;3/6/2000, Vol. 76 Issue 10 

    We demonstrate the effect of antimony (Sb) composition on the oxidation mechanism of AlAs[sub 1-x]Sb[sub x] (x<0.21) layers on GaAs substrates. It has been demonstrated that addition of a group-III element like Ga to AlAs slows the rate of oxidation. In contrast, addition of a group-V element...

  • Crystallization study of (As2S3)100-x(SbSI)x amorphous films by the optical method. Rubish, V. M.; Kozusenok, O. V.; Shtets, P. P.; Marjan, V. M.; Gera, E. V.; Tarnaj, A. A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2012, Vol. 15 Issue 3, p294 

    The results of isothermal and nonisothermal crystallization investigations of the (As2S3)100-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films...

  • Characterization of quaternary chalcogenide As-Ge-Te-Si thin films. Amer, H. H.; Elkordy, M.; Zien, M.; Dahshan, A.; Elshamy, R. A. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2011, Vol. 14 Issue 3, p302 

    Investigated in this paper is the effect of replacement of Te by Si on the optical gap and some other physical operation parameters of quaternary chalcogenide As30Ge10Te60-xSix (where x = 0, 5, 10, 12 and 20 at.%) thin films. Thin films with the thickness 100-200 nm of As30Ge10Te60-xSix were...

  • Reversible and athermal photo-vitrification of As[sub 50] Se[sub 50] thin films deposited onto silicon wafer and glass substrates. Prieto-Alcón, R.; Márquez, E.; González-Leal, J.M.; Jiménez-Garay, R.; Kolobov, A.V.; Frumar, M. // Applied Physics A: Materials Science & Processing;1999, Vol. 68 Issue 6, p653 

    Abstract. Photo-vitrification of As[sub 50]Se[sub 50] thin films deposited onto silicon wafer and glass substrates has been studied using X-ray diffraction, far-infrared, and differential infrared spectroscopies. The optical study of this photo-amorphization effect has been carried out by two...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics