TITLE

Rectification properties and interface states of heterojunctions between solid C60 and n-type GaAs

AUTHOR(S)
Chen, K. M.; Zhang, Y. X.; Qin, G. G.; Jin, S. X.; Wu, K.; Li, C. Y.; Gu, Z. N.; Zhou, X. H.
PUB. DATE
December 1996
SOURCE
Applied Physics Letters;12/2/1996, Vol. 69 Issue 23, p3557
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Solid C60/n-GaAs heterojunctions have been fabricated by deposition of solid C60 film on the (100)-oriented epitaxial n-type GaAs substrates and their electrical characteristics have been measured. The rectification ratio is greater than 106 at a bias of ±1 V. The current for a fixed forward bias is an exponential function of reciprocal temperature, from which the effective potential barrier height of the heterojunction is determined to be 0.58 eV. A trap with an energy level 0.35 eV below the conduction band of GaAs at the C60/GaAs interface has been observed by the deep level transient spectroscopy technique. © 1996 American Institute of Physics.
ACCESSION #
6289190

 

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