TITLE

Vertically segregated polymer-blend photovoltaic thin-film structures through surface-mediated solution processing

AUTHOR(S)
Arias, A. C.; Corcoran, N.; Banach, M.; Friend, R. H.; MacKenzie, J. D.; Huck, W. T. S.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1695
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Surface treatment and solvent evaporation control are used to promote vertical segregation in polyfluorene-blend thin films. This surface-mediated control of the compositional structure in the direction normal to the plane of the film has important implications for optimizing charge transport in solution-processed conjugated polymer-blend optoelectronics. Here, the surface energy of the hole-collector electrode of photovoltaic devices is modified by deposition of self-assembled monolayers to favor segregation of the hole-accepting component of the blend to the substrate. Devices fabricated with intentionally vertically segregated blends showed external quantum efficiencies of up to 14%, which is ten times higher than that of devices fabricated without surface modification. © 2002 American Institute of Physics.
ACCESSION #
6281355

 

Related Articles

  • Growing nanotrees.  // Industrial Physicist;Oct/Nov2004, Vol. 10 Issue 5, p19 

    Describes a method developed at Lund University, Sweden, for growing multichemical nanotrees in a highly controlled manner, that can be used as light emitters or for converting light into usable energy in photovoltaic devices. Steps in the tree-growth process.

  • Enhanced photovoltaic performance in nanoimprinted pentacene-PbS nanocrystal hybrid device. Dissanayake, D. M. N. M.; Adikaari, A. A. D. T.; Silva, S. R. P. // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p093308 

    Pentacene and PbS nanocrystal bilayer photovoltaic devices are fabricated after the pentacene layer is subjected to nanoimprinting using a laser textured silicon stamp. Increased short circuit current densities are observed for the imprinted devices, which are attributed to increased charge...

  • 23 GHz operation of a room temperature photovoltaic quantum cascade detector at 5.35 μm. Hofstetter, Daniel; Graf, Marcel; Aellen, Thierry; Faist, Jérôme; Hvozdara, Lubos; Blaser, Stéphane // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p061119 

    We present a room temperature operated 5.35 μm quantum cascade detector which was tested at high frequencies using an optical heterodyne experiment. Two slightly detuned continuous wave distributed feedback single mode quantum cascade lasers were used to generate a beating signal. The maximum...

  • Photovoltaics with piezoelectric core-shell nanowires. Boxberg, Fredrik; So\ndergard, Niels; Xu, H. Q.; Wallentin, Jesper; Jin, Aizi; Trygg, Erik; Borgström, Magnus // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p469 

    We report on the discovery of a generic piezoelectric field in strained core-shell compound semiconductor nanowires. We present the lattice-mismatch induced strain in epitaxial core-shell nanowires and show that it gives, very generally, rise to an internal piezoelectric field along the axis of...

  • Large lateral photovoltaic effect with ultrafast relaxation time in SnSe/Si junction. Xianjie Wang; Xiaofeng Zhao; Chang Hu; Yang Zhang; Bingqian Song; Lingli Zhang; Weilong Liu; Zhe Lv; Yu Zhang; Jinke Tang; Yu Sui; Bo Song // Applied Physics Letters;7/11/2016, Vol. 109 Issue 2, p023502-1 

    In this paper, we report a large lateral photovoltaic effect (LPE) with ultrafast relaxation time in SnSe/p-Si junctions. The LPE shows a linear dependence on the position of the laser spot, and the position sensitivity is as high as 250mV mm-1. The optical response time and the relaxation time...

  • Theoretical study on enhancement of the lateral photovoltaic effect for position sensitive detector with resonant cavity. Xi, Feng; Qin, Lan; Duan, Ying; Xue, Lian // European Physical Journal - Applied Physics;Dec2012, Vol. 60 Issue 3, pN.PAG 

    A one-dimensional (1D) position sensitive detector (PSD) with the active layer imbedded in resonant cavity is proposed. The lateral photovoltaic effect (LPE) on the surface of active layer is related to the lifetime of photo-generated carriers-electrons and holes pairs. Theoretically, by...

  • Surface photovoltage spectroscopy in a Kelvin probe force microscope under ultrahigh vacuum. Streicher, F.; Sadewasser, S.; Lux-Steiner, M. Ch. // Review of Scientific Instruments;Jan2009, Vol. 80 Issue 1, pN.PAG 

    Surface photovoltage (SPV) spectroscopy is a common method for optoelectronic semiconductor characterization. Kelvin probe force microscopy has developed into a widely used tool for nanoscale characterization of semiconductors, metals, and insulators. We present here a setup for the measurement...

  • Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range. Mikhailova, M.; Andreev, I.; Moiseev, K.; Ivanov, E.; Konovalov, G.; Mikhailov, M.; Yakovlev, Yu. // Semiconductors;Feb2011, Vol. 45 Issue 2, p248 

    Photodetectors for the spectral range 2-4 μm, based on an asymmetric type-II heterostructure p-InAs/AlSb/InAsSb/AlSb/( p, n)GaSb with a single deep quantum well (QW) or three deep QWs at the heterointerface, have been grown by metal-organic vapor phase epitaxy and analyzed. The transport,...

  • Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films. Pethuraja, Gopal G.; Welser, Roger E.; Sood, Ashok K.; Lee, Changwoo; Alexander, Nicholas J.; Efstathiadis, Harry; Haldar, Pradeep; Harvey, Jennifer L. // Materials Sciences & Applications;Feb2012, Vol. 3 Issue 2, p67 

    We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics