TITLE

Acousto-optic diffraction of blue and red light in GaN

AUTHOR(S)
Ciplys, D.; Rimeika, R.; Shur, M. S.; Gaska, R.; Deng, J.; Yang, J. W.; Khan, M. A.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1701
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The diffraction of guided optical waves on surface acoustic waves in a GaN layer grown by metalorganic chemical-vapor deposition on a (0001) sapphire substrate has been experimentally studied. The measurements have been performed at optical wavelengths 442 and 633 nm for the acoustic wavelength of 16 μm. The acousto-optic diffraction regime was close to the pure Bragg diffraction regime. The advantage of considerably lower acoustic power required at the shorter optical wavelength for diffraction is demonstrated. Our results show the potential of GaN-based structures for the development of blue acousto-optical devices. © 2002 American Institute of Physics.
ACCESSION #
6281353

 

Related Articles

  • Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate. Ig-Hyeon Kim; Sone, C.; Ok-Hyun Nam; Yong-Jo Park; Taeil Kim // Applied Physics Letters;12/27/1999, Vol. 75 Issue 26, p4109 

    Demonstrates pendeoepitaxy of gallium nitride (GaN) on sapphire substrate with silica mask. Application of transmission electron microscopy and double crystal x-ray diffraction; Kinds of coalesce and tilt boundaries; Tilting mechanism in pendeoepitaxy.

  • Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy. Schenk, H.P.D.; Feltin, E.; Laügt, M.; Tottereau, O.; Vennéguès, P.; Doghèche, E. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5139 

    Waveguiding GaN epitaxial layers have been grown by low-pressure metalorganic vapor phase epitaxy on Si(111) substrates using AlN/GaN short period-superlattice (SPS) buffer layer systems. The AlN/GaN SPS has been studied by x-ray diffraction where it appears as pseudoternary Al[sub x]Ga[sub...

  • High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers. Daniš, S.; Holý, V.; Zhong, Z.; Bauer, G.; Ambacher, O. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3065 

    Diffuse x-ray scattering from epitaxial layers with screw dislocations perpendicular to the surface is calculated assuming correlated dislocation positions. The resulting intensity distribution was compared with a reciprocal-space map measured in a symmetric diffraction from a hexagonal...

  • Polymorphism in the ferromagnetic GaCrN-diluted magnetic semiconductor: Luminescence and structural investigations. Shanthi, S.; Hashimoto, M.; Zhou, Y. K.; Kimura, S.; Kim, M. S.; Emura, S.; Hasuike, N.; Harima, H.; Hasegawa, S.; Ishimaru, M.; Hirotsu, Y.; Asahi, H. // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p013526 

    Luminescence properties of the transition-metal chromium-doped gallium nitride (GaCrN) epitaxial layers on sapphire substrates have been extensively studied by varying the doping level, excitation intensity, and temperature of study. Photoluminescence spectra of the doped films were found to be...

  • Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature. Kim, M. H.; Oshima, M.; Kinoshita, H.; Shirakura, Y.; Miyamura, K.; Ohta, J.; Kobayashi, A.; Fujioka, H. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p031916 

    We have investigated the initial stage of GaN epitaxial growth on 6H-SiC (0001) at low substrate temperatures by pulsed laser deposition (PLD). We found that GaN grows epitaxially even at room temperature (RT) on atomically flat 6H-SiC (0001) surfaces, which can be explained by the enhanced...

  • Structural characterization of AlGaN/GaN superlattices by three-beam X-ray diffraction. Kyutt, R. // Technical Physics Letters;Jan2012, Vol. 38 Issue 1, p38 

    Three-beam X-ray diffraction in AlGaN/GaN superlattices (SLs) grown by metalorganic chemical vapor deposition on c-sapphire has been measured in the Renninger scheme. The primary beam corresponds to a forbidden 0001 reflection. Then, θ-scan curves were measured at the maximum of each...

  • Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress. Breiland, W.G.; Lee, S.R.; Koleske, D.D. // Journal of Applied Physics;4/1/2004, Vol. 95 Issue 7, p3453 

    When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients...

  • Anisotropic strain state of the [formula] GaN quantum dots and quantum wires. Amstatt, B.; Landré, O.; Nicolin, V. Favre; Proietti, M. G.; Bellet-Amalric, E.; Bougerol, C.; Renevier, H.; Daudin, B. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 6, p063521 

    The strain state of the [formula] GaN quantum dots and quantum wires has been studied by a combination of multiwavelength anomalous diffraction and diffraction anomalous fine structure under grazing incidence. The three components of the anisotropic deformation have been independently...

  • Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition. Kawaguchi, Y.; Ohta, J.; Kobayashi, A.; Fujioka, H. // Applied Physics Letters;11/28/2005, Vol. 87 Issue 22, p221907 

    We have grown GaN films on ZrB2 substrates at room temperature (RT) by using a pulsed-laser deposition technique. Reflection high-energy electron diffraction observations have revealed that GaN growth can occur in a layer-by-layer mode, even at RT, and that the surfaces of the films are...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics