Optical properties of the deep Mn acceptor in GaN:Mn

Korotkov, R. Y.; Gregie, J. M.; Wessels, B. W.
March 2002
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1731
Academic Journal
The optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1 meV. Two pseudolocal vibrational modes associated with manganese were observed with energies of hv[sub 1]=20 and hv[sub 2]=73 meV. Deep-level optical spectroscopy measurements on lightly Mn-doped samples indicate that Mn forms a deep acceptor level at E[sub v]+1.42 eV. Using the vacuum referred binding energy model for transition metals and the measured Mn energy level, the electron affinity of GaN is calculated to be 3.4 eV, which agrees well with experimental values. © 2002 American Institute of Physics.


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