TITLE

Photoinduced stress in hydrogenated amorphous silicon films

AUTHOR(S)
Stratakis, E.; Spanakis, E.; Tzanetakis, P.; Fritzsche, H.; Guha, S.; Yang, J.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1734
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photo-induced compressive stress ΔS in hydrogenated amorphous silicon (a-Si:H) has been studied using films deposited by plasma-enhanced or hot-wire chemical vapor deposition on crystalline silicon microcantilevers. The kinetics of ΔS(t) first rises with exposure time as t[sup 0.5] and follows a stretched exponential. The saturation values ΔS[sub sat] correspond to volume changes of about 10[sup -3], which excludes the possibility that ΔS is a consequence of the light-induced creation of coordination defects. The highest-quality films have large initial stress, small values of the Young’s modulus, and a rapid approach of ΔS(t) towards saturation. © 2002 American Institute of Physics.
ACCESSION #
6281341

 

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