TITLE

Radiative recombination mechanism in GaN[sub x]P[sub 1-x] alloys

AUTHOR(S)
Buyanova, I. A.; Rudko, G. Yu.; Chen, W. M.; Xin, H. P.; Tu, C. W.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1740
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Based on the results of temperature-dependent photoluminescence (PL) and absorption measurements, the PL emission in GaNP epilayers and GaNP/GaP multiple quantum well structures with N composition up to 4% is shown to be dominated by optical transitions within deep states likely related to N clusters. With increasing N composition, these states are shown to become resonant with conduction band of the alloy and thus optically inactive, leading to the apparent redshift of the PL maximum position. © 2002 American Institute of Physics.
ACCESSION #
6281339

 

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