Comparison of arsenic and phosphorus diffusion behavior in silicon–germanium alloys

Eguchi, S.; Hoyt, J. L.; Leitz, C. W.; Fitzgerald, E. A.
March 2002
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1743
Academic Journal
The diffusion behavior of ion-implanted arsenic and phosphorus in relaxed Si[sub 0.8]Ge[sub 0.2] has been investigated. Under equilibrium, extrinsic conditions, both dopants are observed to diffuse faster in SiGe than in Si. Simulations of the measured profiles suggest that the ratio of the effective diffusivity in Si[sub 0.8]Ge[sub 0.2] compared to that in Si is roughly seven for arsenic, and roughly two for phosphorus. Under transient diffusion conditions, the arsenic diffusivity in SiGe is retarded, and the magnitude of the diffusion is roughly the same as that in Si. This result suggests that it is possible to optimize the diffusion conditions to achieve n[sup +] source/drain junctions that are as shallow in SiGe as in Si. © 2002 American Institute of Physics.


Related Articles

  • Redistribution of arsenic in silicon during high pressure thermal oxidation. Choi, Seong S.; Numan, M. Z.; Chu, W. K.; Srivastava, J. K.; Irene, E. A. // Applied Physics Letters;3/16/1987, Vol. 50 Issue 11, p688 

    The redistribution of arsenic in Si has been studied in terms of the relative rates of oxidation and diffusion in silicon. Redistribution of arsenic in silicon during oxidation is dependent on the ratio of oxidation rate to the diffusivity in silicon, B/D1/2, as well as on the thermodynamic...

  • Time-dependent diffusion of ion-implanted arsenic in thermally grown SiO2. Yamaji, Tetsuo; Ichikawa, Fumio // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2365 

    Presents an analysis of arsenic distributions in the SiO[sub2]. Assumptions which determine the diffusivity of arsenic from complicated arsenic distributions; Diffusion of arsenic implanted into thermally grown SiO[sub2]; Factor attributed to the time-dependent diffusion.

  • Diffusion of As Ions and Self-Diffusion in Silicon during Implantation. Demakov, K. D.; Starostin, V. A.; Shemardov, S. G. // Technical Physics;Oct2002, Vol. 47 Issue 10, p1333 

    Experimental concentration profiles of As ions in a silicon substrate at temperatures of 20, 600, and 1050°C and ion current of 40 µA/cm², as well as at 1050°C and 10 gA/cm², are presented. On the basis of our and previously published experimental data, the process of...

  • Transient enhanced diffusion of arsenic in silicon. Solmi, S.; Ferri, M.; Bersani, M.; Giubertoni, D.; Soncini, V. // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p4950 

    The transient enhanced diffusion (TED) of As in silicon samples implanted at 35 keV with dose 5×10[sup 15] cm[sup -2] has been investigated in the temperature range between 750 and 1030 °C by comparing experimental and simulated profiles. For temperatures higher than 900 °C the...

  • Kinetics of arsenic activation and clustering in high dose implanted silicon. Kamgar, Avid; Baiocchi, F. A.; Sheng, T. T. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1090 

    We have observed a metastable state in activation of high dose arsenic implants into silicon. This state is marked by a local minimum in the sheet resistance which increases to a local maximum as the anneal time increases. Detailed sheet resistance data as well as Rutherford backscattering and...

  • A comparison of the thermal redistribution of arsenic, ion implanted into titanium disilicide films formed on single and polycrystalline silicon. Cao, D. X.; Reeves, G. K.; Harrison, H. B. // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2208 

    Presents a study that investigated the diffusion behavior of arsenic implanted into silicides of titanium formed on single and polycrystalline silicon. Information on the application of titanium disilicide or TiSi [sub2] in current integrated circuit fabrication; Examination of the Rutherford...

  • Role of point defects in the silicon diffusion in GaAs and Al0.3Ga0.7As and in the related superlattice disordering. Pavesi, L.; Ky, Nguyen Hong; Ganière, J. D.; Reinhart, F. K.; Baba-Ali, N.; Harrison, I.; Tuck, B.; Henini, M. // Journal of Applied Physics;3/1/1992, Vol. 71 Issue 5, p2225 

    Deals with a study which determined the role of point defects in the silicon diffusion in GaAs, Al[sub0.3]Ga[sub0.7]As, and in the related superlattice disordering. Background to the study; Review of point defects in GaAs and Al[sub1-x]Ga[subx]As; Sample characteristics and experimental setup;...

  • Modeling Nonlinear High-Gradient Diffusion in Semiconductors. Kondrachenko, L. A.; Rassadin, A.�.; Chistyakov, A. S. // Technical Physics Letters;Feb2005, Vol. 31 Issue 2, p101 

    A nonlinear phenomenological equation is proposed for the description of shallow (=1�m) impurity diffusion in semiconductors and is solved by numerical methods. A comparison to the results of measurements of the diffusion of arsenic in silicon show good agreement between the proposed theory...

  • Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry. Schaber, H.; Criegern, R. v.; Weitzel, I. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4036 

    Presents a study that analyzed the polycrystalline silicon diffusion sources using secondary ion mass spectrometry. Methodology; Measurement of the diffusion profiles of arsenic and phosphorus in the crystal; Influence of the poly-silicon/mono-silicon interface; Determination of the diffusion...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics