TITLE

Current transport in InP/In[sub 0.5](Al[sub 0.6]Ga[sub 0.4])[sub 0.5]P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy

AUTHOR(S)
Reddy, C. V.; Narayanamurti, V.; Ryou, J. H.; Dupuis, R. D.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ballistic electron emission microscopy/spectroscopy (BEEM/S) has been employed to image, inject, and investigate the current transport through self-assembled InP quantum dots embedded in InAlGaP barriers. The spectroscopy performed on the dot and off the dot revealed that the charge confinement within the dots is more effective than the leakage through the quasibound states. Evidence for the charge accumulation in the quantum dots is presented with the help of BEEM imaging as a function of the tip bias. © 2002 American Institute of Physics.
ACCESSION #
6281329

 

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