Transition from negative magnetoresistance behavior to positive behavior in Co[sub 20](Cu[sub 1-x]Ge[sub x])[sub 80] ribbons

He, J.; Zhang, Z. D.; Liu, J. P.; Sellmyer, D. J.
March 2002
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1779
Academic Journal
We report a transition of the giant magnetoresistance (GMR) behavior in nanocrystalline Co[sub 20](Cu[sub 1-x]Ge[sub x])[sub 80] ribbons from negative to positive, as the semiconductor Ge substitutes for the Cu matrix. The growth of the hexagonal Co[sub 3]Ge[sub 2] compound leads to a change of the physical origin of the GMR. The normal spin-dependent transport behavior in the CoCu granular system evolves into Coulomb blockade behavior of electronic tunneling in ribbons with a Co/Co[sub 3]Ge[sub 2]/Co junctionlike configuration. © 2002 American Institute of Physics.


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