TITLE

Strongly capacitively coupled quantum dots

AUTHOR(S)
Chan, I. H.; Westervelt, R. M.; Maranowski, K. D.; Gossard, A. C.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1818
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Double quantum dots were formed in a gated GaAs/AlGaAs heterostructure with negligible interdot tunneling; strong capacitive coupling was provided by a floating interdot capacitor. The interdot capacitance was measured to be 0.28C[sub Σ], where C[sub Σ] is the single-dot capacitance. Coulomb blockade conductance images for both dots versus side gate voltages at 70 mK show a hexagonal pattern of peaks; the double dot acts as a single-electron current switch. For weak tunneling, the conductance peaks of both dots fit thermally broadened line shapes. Charge fluctuations produced by strong tunneling on one dot are induced on the second, filling in its peak splitting. © 2002 American Institute of Physics.
ACCESSION #
6281313

 

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