Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

Wernersson, L.-E.; Borgstro¨m, M.; Gustafson, B.; Gustafsson, A.; Pietzonka, I.; Pistol, M.-E.; Sass, T.; Seifert, W.; Samuelson, L.
March 2002
Applied Physics Letters;3/11/2002, Vol. 80 Issue 10, p1841
Academic Journal
We have studied GaP/GaAs/GaP and GaAs[sub x]P[sub 1-x]/GaAs/GaAs[sub x]P[sub 1-x] double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAs[sub x]P[sub 1-x]/GaAs/GaAs[sub x]P[sub 1-x] resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5. © 2002 American Institute of Physics.


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