Secondary electron dopant contrast imaging of compound semiconductor junctions

Chung, Suk; Wheeler, Virginia; Myers-Ward, Rachael; Nyakiti, Luke O.; Eddy, Charles R.; Gaskill, D. Kurt; Skowronski, Marek; Picard, Yoosuf N.
July 2011
Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014902
Academic Journal
Secondary electron imaging combined with immersion lens and through-the-lens detection has been used to analyze various semiconductor junctions. Dopant contrast imaging was applied for multi-doped 4H-SiC, growth-interrupted n+/p and n/n+ homoepitaxial interfaces, and an AlGaAs/GaAs p-n junction light-emitting diode structure. Dopant contrast was explained by the local variation in secondary electron escape energies resulting from the built-in potential difference. The effect of varying electron affinity on contrast for the heterostructures is also discussed. The contrast profile of the n-doped AlGaAs compared reasonably well to the simulated valence bandedge energy using a previously determined efficiency of dopant ionization.


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