Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

Kimura, Mutsumi; Inoue, Satoshi; Shimoda, Tatsuya; Tam, Simon W.-B.; Lui, O. K. Basil; Migliorato, Piero; Nozawa, Ryoichi
March 2002
Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3855
Academic Journal
Trap states at the oxide-silicon interface and grain boundary in laser-crystallized polycrystalline-silicon thin-film transistors were extracted. The oxide-silicon interface traps and grain boundary traps can be extracted using the low-frequency capacitance–voltage characteristic and current–voltage characteristic, respectively. The traps above and below the midgap can be extracted using n-type and p-type transistors, respectively. The oxide-silicon interface traps consist of deep states and therefore seem to be caused by dangling bonds. The grain boundary traps consist of tail states and therefore seem to be caused by distortion of silicon-silicon bonds. Moreover, degradation by self-heating was analyzed. The oxide-silicon interface traps increase after the degradation. This means that silicon-hydrogen bonds are dissolved, and dangling bonds are generated. The grain boundary traps also increase a little. © 2002 American Institute of Physics.


Related Articles

  • Comment on: 'Random telegraph signals arising from fast interface states in.... Uren, M.J.; Ming-Horn Tsai // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1443 

    Comments on the mensuration of random telegraph signals (RTS) from fast silicon-silicon oxide interface states from slow states. Use of high sampling rates; Features of RTS published earlier; Description of interface states with common chemical nature and environment.

  • Direct SiO[sub 2]/beta-SiC(100)3x2 interface formation from 25 degree Centigrade to 500 degree.... Semond, F.; Douillard, L. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2144 

    Examines direct silicon dioxide/beta-silicon carbon interface formation at 25 degrees to 500 degrees Centigrade. Investigation by core level and valence band photoemission spectroscopies; Significance of low molecular oxygen exposures to surface reconstruction; Enhancement of silicon dioxide...

  • Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(0338). Yano, Hiroshi; Hirao, Taichi; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Shiomi, Hiromu // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4772 

    The interface properties of SiO[sub 2]/4H-SiC(03&3macr;8) were characterized using n-type metaloxide-semiconductor structures fabricated by wet oxidation. The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements at a low temperature...

  • Dependence of Si-SiO2 interface state density on oxide thickness in structures with ultrathin (79–227 Ã…) oxides. Kar, S.; Shanker, D.; Chari, K. S. // Applied Physics Letters;12/1/1985, Vol. 47 Issue 11, p1203 

    Admittance voltage characteristics of Si/79–227 Å SiO2/metal structures were measured in dark and under optical illumination in the frequency range of 30 Hz–100 kHz. For fabricating the structures, thermal oxidation was carried out in dry oxygen at 900 °C at 1 atm. The...

  • Enhanced injection at silicon-rich oxide interfaces. Chang, K-T.; Rose, K. // Applied Physics Letters;10/6/1986, Vol. 49 Issue 14, p868 

    The enhanced electron injection of silicon-rich oxide (SRO)/SiO2 interfaces is explained. We find an excellent fit to the current-voltage characteristics of these interfaces by calculating the field enhancement over the surface of oblate spheroids in a uniform applied field. This explains why...

  • Spin-dependent pair generation at Si/SiO2 interfaces. Vranch, R. L.; Henderson, B.; Pepper, M. // Applied Physics Letters;10/3/1988, Vol. 53 Issue 14, p1299 

    We report spin-dependent generation of electron-hole pairs at the Si/SiO2 interface detected via microwave-induced changes in the recombination current through a gate-controlled diode.

  • Interface traps at midgap during defect transformation in (100) Si/SiO2. Nishioka, Yasushiro; Ma, T. P. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1744 

    The interface traps generated by ionizing radiation or hot-electron injection undergo continuous changes with time after the damaging source is turned off. This letter focuses on the interfacial defect transformation process in (100) Si/SiO2, in which a large portion of the interface trap peak...

  • Chemistry of Si-SiO2 interface trap annealing. Reed, Michael L.; Plummer, James D. // Journal of Applied Physics;6/15/1988, Vol. 63 Issue 12, p5776 

    Focuses on a study which examined the kinetics and chemistry of silicon and silicon oxide interface trap annealing. Measurements of interface trap density as a function of anneal time; Methodology of the experiments; Effect of anneal temperature and crystal orientation on the kinetics;...

  • Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface. Shenoy, J. N.; Das, M. K.; Cooper, J. A.; Melloch, M. R.; Palmour, J. W. // Journal of Applied Physics;3/15/1996, Vol. 79 Issue 6, p3042 

    Focuses on a study which characterized the SiO[sub2]/SiC interface through the high-low capacitance-voltage and conductance-frequency techniques. Experimental details; Results and discussion; Summary.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics