TITLE

Magnetoresistive effect in p-type semiconducting diamond films

AUTHOR(S)
Kong, C. Y.; Wang, W. L.; Liao, K. J.; Wang, S. X.; Fang, L.; Ma, Y.
PUB. DATE
March 2002
SOURCE
Journal of Applied Physics;3/1/2002, Vol. 91 Issue 5, p3044
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Magnetoresistive effects were studied in ρ-type heteroepitaxial diamond films with a strip or Corbino disk structure in a magnetic field ranging from 0 to 5 T. The films were grown by microwave plasma chemical vapor deposition and boron doped by cold ion implantation and rapid thermal annealing. The experimental results show that the magnetoresistance (MGR) of ρ-type heteroepitaxial diamond films strongly depends on the geometric form of the samples and the magnetic field. Diamond films are assumed to be an isotropic isothermal solid in which conduction is by holes from light, heavy and split-off bands. Based on the Fuchs and Sondheimer thin-film theory, considering spherical energy surfaces and mixed scattering by lattice vibrations and ionized impurities and surface, a theoretical description of the magnetoresistive effect in diamond films is presented by solving the Boltzmann transport equation in the relaxation time approximation. A relationship between the MGR and the thickness of films, magnetic field, and mobility is shown.
ACCESSION #
6221108

 

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