TITLE

Strain relaxation effect in microdisk lasers with compressively strained quantum wells

AUTHOR(S)
Fujita, Masayuki; Ushigome, Reona; Baba, Toshihiko
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1511
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
From lasing wavelengths observed for many samples of microdisk lasers with GaInAsP compressively strained quantum wells (CS-QWs), we estimate the gain peak redshifted by ∼10 meV. We explain this phenomenon as the strain relaxation in the CS-QWs at the disk wing exposed to the air. Band and rate equation analyses show that the built-in potential by strain relaxation accelerates the carrier diffusion toward the disk edge and reduces the threshold to 30%-60% of that without strain relaxation. This result indicates the advantage of CS-QWs not only for the microdisk laser but also for various microlasers with a membrane structure, e.g., photonic crystal slab lasers.
ACCESSION #
6220591

 

Related Articles

  • Carrier energy relaxation in multisubband quantum well lasers with hot phonon effects. Tsai, Chin-Yi; Eastman, Lester F.; Lo, Yu-Hwa; Tsai, Chin-Yao // Journal of Applied Physics;11/1/1994, Vol. 76 Issue 9, p5334 

    Presents a study on carrier energy relaxation rates via carrier-polar optical phonon interactions with hot phonon effects in multisubband quantum well structures. Information on quantum well lasers; Theory; Results and discussion.

  • Low threshold 1.55 mum wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by.... Carlin, J.F.; Syrbu, A.V.; Berseth, C.A.; Behrend, J.; Rudra, A.; Kapon, E. // Applied Physics Letters;7/7/1997, Vol. 71 Issue 1, p13 

    Examines the use of chemical beam epitaxy in solving strain relaxation problems preventing use of InAsP quantum wells in 1.55 micrometer laser. Characteristics of the quantum wells integrated in a strain-balanced laser; Confirmation of the laser emission homogeneity with an infrared camera;...

  • Improved performance of compressively as well as tensile strained quantum-well lasers. Krijn, M.P.C.M.; 't Hooft, G.W. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1772 

    Examines the effects of strain on the laser characteristics of quantum well lasers. Determination of threshold current density and in-plane energy dispersion; Shift in the position of heavy-hole subbands; Separation of the heavy-hole and light-hole subband levels.

  • Very high relaxation oscillation frequency in dry-etched short cavity GaAs/AlGaAs multiquantum well lasers. Yuasa, Tonao; Yamada, Tomoyuki; Asakawa, Kiyoshi; Ishii, Makoto; Uchida, Mamoru // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1122 

    Relaxation oscillation frequencies are reported for short cavity GaAs/AlGaAs multiquantum well lasers with dry-etched facets. Decreased electron and photon lifetimes combined with the high differential gain constant of short cavity lasers yield very high relaxation oscillation frequencies. A...

  • Low threshold current InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxy. Zhang, G.; Nappi, J. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p96 

    Examines the low threshold current indium-gallium arsenide/gallium arsenide/gallium-indium phosphide (InGaAs/GaAs/GaInP) lasers grown by gas-source molecular beam epitaxy. Fabrication of InGaAs/GaAs/GaInP lasers with three quantum wells; Advantages of replacing the AlGaAs cladding layers of the...

  • Optical gain due to excitonic transitions in ZnCdSe/ZnMgSSe strained layer quantum well.... Huang, W.; Jain, F.C. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1596 

    Examines experimentally observed optical gain data due to excitonic transitions in the presence of compressive strain. Significance of excitonic transitions in the gain mechanism of II-VI quantum well lasers; Similarity of the absorption calculations and experimental measurements; Inclusion of...

  • Femtosecond intersubband relaxation and population inversion in stepped quantum well. Sung, C.Y.; Norris, T.B. // Applied Physics Letters;1/22/1996, Vol. 68 Issue 4, p435 

    Investigates intersubband relaxation rates in stepped quantum well at room temperature. Use of differential transmission spectroscopy with subpicosecond time resolution; Derivation of the dynamics of the subband populations; Occurrence of a population inversion between levels.

  • Effect of electron–phonon interaction on the thermoelectric properties of superlattices. Ivanov, Yu. V.; Vedernikov, M. V.; Ravich, Yu. I. // JETP Letters;2/25/99, Vol. 69 Issue 4, p317 

    The electron relaxation time on acoustical phonons, the electrical conductivity, and the phonon-drag thermopower of a semiconductor superlattice with quasi-two-dimensional quantum wells are calculated. The inelasticity of the scattering of charge carriers is taken into account. It is shown that...

  • Short-wavelength (λ<2 μm) intersubband absorption dynamics in ZnSe/BeTe quantum wells. Akimoto, R.; Akita, K.; Sasaki, F.; Kobayashi, S. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2433 

    We report on linear and nonlinear short-wavelength (λ<2 μm) intersubband (ISB) absorption characteristics in ZnSe/BeTe quantum wells by means of an interband pump and ISB pump/probe technique. The ISB absorption saturates with a hole burning effect, indicating the absorption band is...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics