Strain relaxation effect in microdisk lasers with compressively strained quantum wells

Fujita, Masayuki; Ushigome, Reona; Baba, Toshihiko
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1511
Academic Journal
From lasing wavelengths observed for many samples of microdisk lasers with GaInAsP compressively strained quantum wells (CS-QWs), we estimate the gain peak redshifted by ∼10 meV. We explain this phenomenon as the strain relaxation in the CS-QWs at the disk wing exposed to the air. Band and rate equation analyses show that the built-in potential by strain relaxation accelerates the carrier diffusion toward the disk edge and reduces the threshold to 30%-60% of that without strain relaxation. This result indicates the advantage of CS-QWs not only for the microdisk laser but also for various microlasers with a membrane structure, e.g., photonic crystal slab lasers.


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