TITLE

Closely stacked InAs/GaAs quantum dots grown at low growth rate

AUTHOR(S)
Heidemeyer, H.; Kiravittaya, S.; Mu¨ller, C.; Jin-Phillipp, N. Y.; Schmidt, O. G.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1544
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a systematic study of closely stacked InAs/GaAs quantum dots (QDs) grown at low growth rates. Transmission electron microscopy reveals that for thin spacer layers vertically aligned QDs merge into one large QD. After capping the initial QD layer the GaAs surface is decorated with well-developed nanostructures, which act as nucleation centers for the QDs deposited in the second layer. Despite the size increase, photoluminescence (PL) experiments show a systematic blueshift up to 103 meV of the QD related signal with decreasing spacer thickness. We explicitly show that this significant blueshift cannot fully be ascribed to specific growth phenomena, but instead is caused by the actual presence of the second dot layer. We report a PL linewidth as narrow as 16 meV at low temperature for a sample with 5 nm spacer thickness.
ACCESSION #
6220579

 

Related Articles

  • Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots. Wang, J. S.; Wang, J.S.; Chen, J. F.; Chen, J.F.; Huang, J. L.; Huang, J.L.; Wang, P. Y.; Wang, P.Y.; Guo, X. J.; Guo, X.J. // Applied Physics Letters;11/6/2000, Vol. 77 Issue 19 

    The carrier distribution and defects have been investigated in InAs/GaAs quantum dots by cross-sectional transmission electron microscopy (XTEM), capacitance-voltage, and deep level transient spectroscopy. Carrier confinement is found for 1.1- and 2.3-monolayer-(ML)-thick InAs samples. For 2.3...

  • Transmission electron microscopy investigation of structural properties of self-assembled CdSe/ZnSe quantum dots. Kirmse, H.; Schneider, R.; Rabe, M.; Neumann, W.; Henneberger, F. // Applied Physics Letters;3/16/1998, Vol. 72 Issue 11 

    CdSe quantum dots on ZnSe, grown by molecular beam epitaxy and formed during reorganization of an initially uniform film by thermal activation, are microstructurally elucidated in cross section and plan view, using transmission electron microscopy. In diffraction contrast, an almost uniform...

  • On the origin of the "coffee-bean" contrast in transmission electron microscopy images of CdSe/ZnSe quantum dot structures. Litvinov, D.; Rosenauer, A.; Gerthsen, D.; Preis, H.; Bauer, S.; Kurtz, E. // Journal of Applied Physics;4/1/2001, Vol. 89 Issue 7 

    The origin of the "coffee-bean" strain contrast is studied, that is observed in the plan-view transmission electron microscopy (TEM) images of CdSe/ZnSe quantum dot structures. The samples were grown by two different methods: standard molecular-beam epitaxy at 350 °C and atomic layer epitaxy...

  • Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si (001) island growth. Zou, J.; Liao, X. Z.; Cockayne, D. J. H.; Jiang, Z. M. // Applied Physics Letters;9/9/2002, Vol. 81 Issue 11, p1996 

    The misfit dislocations in [001] Ge(Si)/Si islands grown at 700°C were investigated using transmission electron microscopy. 30° partial misfit dislocations are found both in the island/ substrate interface and near the island surface. Since the 30° partial leads the movement of the...

  • Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers. Kirstaedter, N.; Schmidt, O. G.; Ledentsov, N. N.; Bimberg, D.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Maximov, M. V.; Kop’ev, P. S.; Alferov, Zh. I. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1226 

    We present gain measurements and calculations for InAs/GaAs quantum dot injection lasers. Measurements of the modal gain and estimation of the confinement factor by transmission electron microscopy yield an exceptionally large material gain of 6.8(±1)×104 cm-1 at 80 A cm-2. Calculations...

  • Modification of InAs quantum dot structure by the growth of the capping layer. Lian, G. D.; Yuan, J.; Brown, L. M.; Kim, G. H.; Ritchie, D. A. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    InAs quantum dots inserted at the middle of a GaAs quantum well structure have been investigated by transmission electron microscopy and scanning transmission electron microscopy. We find that the growth condition of the overlayer on the InAs dots can lead to drastic changes in the structure of...

  • Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature. Birkedal, D.; Bloch, J.; Shah, J.; Pfeiffer, L.N.; Pfeiffer, L. N.; West, K. // Applied Physics Letters;10/2/2000, Vol. 77 Issue 14 

    High-sensitivity, femtosecond differential transmission measurements on self-organized InAs quantum dots at room temperature allow us to determine the dynamics of resonantly excited electron-hole pairs, as well as the absorbance (α[sub 0]d) of quantum dots. The room temperature differential...

  • Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots. Saint-Girons, G.; Patriarche, G.; Largeau, L.; Coelho, J.; Mereuta, A.; Moison, J. M.; Ge´rard, J. M.; Sagnes, I. // Applied Physics Letters;10/1/2001, Vol. 79 Issue 14, p2157 

    Low-pressure metalorganic-vapor-phase-epitaxy (LP-MOVPE) grown InGaAs/GaAs quantum dots (QDs) emitting around 1.3 μm have been studied by photoluminescence and transmission electron microscopy (TEM). We demonstrate the presence of a bimodal inhomogeneous broadening of the photoluminescence,...

  • Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy. McCaffrey[a], J. P.; Robertson, M. D.; Fafard, S.; Wasilowski, Z. R.; Griswold, E. M.; Madsen, L. D. // Journal of Applied Physics;9/1/2000, Vol. 88 Issue 5, p2272 

    Studies the single and multiple layers of self-assembled InAs quantum dots (QD) produced by the indium-flush technique by transmission electron microscopy. Development of a technique to reproducibly grow QD of uniform size and shape; Determination of the shapes and sizes of QD through the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics