Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth

Feng, Z.; Lovell, E.; Engelstad, R.; Kuech, T.; Babcock, S.
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1547
Academic Journal
Finite element models were developed to simulate the stress history during an entire gallium nitride lateral epitaxial overgrowth process, from seed layer deposition on a substrate to GaN overgrowth above an SiO[sub 2] mask at ll00°C and then cooldown to 20°C. Lattice and thermal expansion mismatches between GaN and sapphire were considered simultaneously. Shearing stresses on a series of crystal planes were transiently analyzed. Based on the computational results, it is possible to predict the locations of high-density dislocations and when they develop, as well as Burgers vectors, dislocation types and their directions.


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