TITLE

Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth

AUTHOR(S)
Feng, Z.; Lovell, E.; Engelstad, R.; Kuech, T.; Babcock, S.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1547
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Finite element models were developed to simulate the stress history during an entire gallium nitride lateral epitaxial overgrowth process, from seed layer deposition on a substrate to GaN overgrowth above an SiO[sub 2] mask at ll00°C and then cooldown to 20°C. Lattice and thermal expansion mismatches between GaN and sapphire were considered simultaneously. Shearing stresses on a series of crystal planes were transiently analyzed. Based on the computational results, it is possible to predict the locations of high-density dislocations and when they develop, as well as Burgers vectors, dislocation types and their directions.
ACCESSION #
6220578

 

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