TITLE

Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas

AUTHOR(S)
Kuriyama, K.; Nagasawa, K.; Suzuki, Y.; Kushida, K.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1562
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The surface layer of GaP(lll)B wafers is converted into α-GaN phase (wurtzite) by annealing at 900 °C for 6 h under NH[sub 3] gas flow. The converted layer extends to ∼10 µm from the surface. X-ray diffraction analysis shows that the conversion layer is a highly c-axis oriented GaN, supported by the appearance of an E[sub 2] phonon mode originated from the c face of α-GaN observed by a Raman scattering method. The photoluminescence spectra at 20 K consist of the zero-phonon-line transition at 3.34 eV followed by two phonon replicas observed 100 and 180 meV lower in energy. The possible origin of the emission is discussed.
ACCESSION #
6220572

 

Related Articles

  • Flat is beautiful for future chips. Kiernan, Vincent // New Scientist;9/21/96, Vol. 151 Issue 2048, p24 

    Focuses on the method devised by researchers at IBM and Cornell University to burn off the surface irregularities in silicon wafers, creating ultra-flat surfaces suitable for manufacturing semiconductors. Composition of the silicon wafer surfaces; Description of the levelling technique in...

  • Variation of lattice parameter with silicon concentration in n-doped, liquid-encapsulated Czochralski GaAs single crystals. Watson, G. Patrick; Ast, Dieter; Elliot, A. Grant // Applied Physics Letters;1/16/1989, Vol. 54 Issue 3, p271 

    The lattice parameters of several Si-doped and undoped GaAs wafers have been measured, using the Bond x-ray diffraction technique. The relative lattice parameters of wafers from the same boule were found to decrease monotonically from seed to tail by as much as 6×10-5(δa/a), following the...

  • Field decrystallization and structural modifications of highly doped silicon in a 2.45-GHz microwave single-mode cavity. Peelamedu, Ramesh; Roy, Rustum; Agrawal, Dinesh; Drawl, William // Journal of Materials Research;Jun2004, Vol. 19 Issue 6, p1599 

    Highly doped n-type silicon powder responds aggressively to a 2.45-GHz microwave E-field, whereas it remains unperturbed in the H-field. In the E-field, after about 30 s of treatment, the silicon powder attained submelting temperatures and thus coagulated to a bulk solid piece. X-ray...

  • X-ray diffraction study of strain distribution in oxidized Si nanowires. Takeuchi, Teruaki; Tatsumura, Kosuke; Shimura, Takayoshi; Ohdomari, Iwao // Journal of Applied Physics;Oct2009, Vol. 106 Issue 7, p073506-1 

    Strain distributions in oxidized Si nanowires fabricated on a (001)-oriented silicon-on-insulator wafer have been determined by analyzing intensity profiles of the diffraction, caused by the nanowire periodicity, around the 111 Bragg point. In this analysis, theoretical diffraction curves,...

  • Influence of silicon-wafer loading ambients in an oxidation furnace on the gate oxide.... Saga, Koichiro; Hattori, Takeshi // Applied Physics Letters;12/22/1997, Vol. 71 Issue 25, p3670 

    Investigates the influence of wafer-loading ambient in an oxidation furnace on gate-oxide integrity degradation due to organic contamination adsorbed on silicon surfaces. Occurrence of degradation in a nitrogen atmosphere; Evaporation of contaminants in an oxygen-containing ambient; Effect of...

  • Kinetics of surface-state laser annealing in Si by frequency-swept infrared photothermal radiometry. Rodriguez, Mario E.; Garcia, J.A.; Mandelis, A.; Jean, C.; Riopel, Y. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2429 

    Studies the kinetics of surface-state laser annealing in silicon by frequency-swept infrared photothermal radiometry. Dependence of the appearance of a signal transient on the electronic quality of the wafer surface; Low-injection minority-carrier lifetimes and diffusion coefficients.

  • Tris-(8-hydroxyquinoline) aluminum nanoparticles prepared by vapor condensation. Chiu, J.-J.; Wang, W.-S.; Kei, C.-C.; Perng, T.-P. // Applied Physics Letters;7/14/2003, Vol. 83 Issue 2, p347 

    Tris-(8-hydroxyquinoline) aluminum (AlQ[SUB3]) spherical nanoparticles of the average size varying from 50 to 500 nm were synthesized by vapor condensation. The surface of the nanoparticles is quite sleek and smooth like that of pearls. The x-ray diffraction patterns reveal that the...

  • Elastic deformation of water surfaces in bonding. Han[a], Weihua; Yu, Jinzhong; Wang, Qiming // Journal of Applied Physics;10/1/2000, Vol. 88 Issue 7, p4401 

    Proposes a model for describing elastic deformation of wafer surfaces in bonding. Study of the change of the surface on the basis of the distribution of the periodic strain field.

  • Modeling the dynamics of Si wafer bonding during annealing. Han[a], Weihua; Yu, Jinzhong; Wang, Qiming // Journal of Applied Physics;10/1/2000, Vol. 88 Issue 7, p4404 

    Describes a quantitative model on the dynamics of silicon wafer bonding during annealing. Difference in the bonding behaviors in the native bonding interface and the thermal oxide bonding interface.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics