Formation of the GaN conversion layer in GaP (111)B wafers using ammonia gas

Kuriyama, K.; Nagasawa, K.; Suzuki, Y.; Kushida, K.
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1562
Academic Journal
The surface layer of GaP(lll)B wafers is converted into α-GaN phase (wurtzite) by annealing at 900 °C for 6 h under NH[sub 3] gas flow. The converted layer extends to ∼10 µm from the surface. X-ray diffraction analysis shows that the conversion layer is a highly c-axis oriented GaN, supported by the appearance of an E[sub 2] phonon mode originated from the c face of α-GaN observed by a Raman scattering method. The photoluminescence spectra at 20 K consist of the zero-phonon-line transition at 3.34 eV followed by two phonon replicas observed 100 and 180 meV lower in energy. The possible origin of the emission is discussed.


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