Neutron irradiation effects on visible-blind Au/GaN Schottky barrier detectors grown on Si(111)

Wang, Ching-Wu
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1568
Academic Journal
Neutron irradiation effects on the Au/sputtered-GaN Schottky barrier photodetectors grown on Si(lll) were investigated. Evidence showed that the optimal fluence (1 x 10[sup 13] n/cm²) of neutron irradiation could not only promote the crystallinity of GaN films, but also effectively repress the occurrence of nitrogen-vacancy-related E[sub t1] traps. We suggested that these two reasons are the main contributing factors to the superior rectifying current-voltage characteristics as well as the enhanced spectral response of Au/sputtered-GaN Schottky detectors.


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