Band anticrossing in group II-O[sub x]–VI[sub 1-x] highly mismatched alloys: Cd[sub 1-x]Mn[sub y]O[sub x]Te[sub 1-x] quaternaries synthesized by O ion implantation

Yu, K. M.; Walukiewicz, W.; Wu, J.; Beeman, J. W.; Ager, J. W.; Haller, E. E.; Miotkowski, I.; Ramdas, A. K.; Becla, P.
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1571
Academic Journal
Highly mismatched group II-O[sub x]-VI[sub 1-x] alloys have been synthesized by oxygen implantation into Cd[sub l-y]Mn[sub y]Te crystals. In crystals with y>0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd[sub 0.38]Mn[sub 0.62]Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II-VI alloys.


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