Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells

De Poortere, E. P.; Shkolnikov, Y. P.; Tutuc, E.; Papadakis, S. J.; Shayegan, M.; Palm, E.; Murphy, T.
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1583
Academic Journal
We report improvements in the quality of two-dimensional (2D) electrons in modulation-doped AlAs quantum wells, leading to electron mobilities as high as 31 m²/Vs, a ten-fold increase over the mobility of previous AlAs samples. Confirming the quality of our quantum wells, developing fractional quantum Hall states are observed in the first Landau level at high order filling factors v=2/5, 3/5, 3/7, 4/7, and 4/9, and at larger fillings, at v=4/3, 5/3, 7/3, 8/3, 8/5, and 11/3. Thanks to the much larger effective mass and g factor of AlAs 2D electrons compared to GaAs, and to the possible multivalley occupancy of AlAs 2D electrons, our improved systems help bring a wider scope to the investigation of low-disorder, interacting 2D electrons.


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