Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells

Hirayama, Hideki; Enomoto, Yasushi; Kinoshita, Atsuhiro; Hirata, Akira; Aoyagi, Yoshinobu
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1589
Academic Journal
We demonstrated room-temperature (RT) intense ultraviolet (UV) emission with wavelength in the range of 300-340 nm from In[sub x1]Al[sub y1]Ga[sub l-x1-yl]N/In[sub x2]Al[sub y2]Ga[sub 1-x2-y2]N multiple-quantum wells (MQWs) fabricated on SiC by metalorganic vapor phase epitaxy. We found that the UV emission is considerably enhanced upon introducing approximately 5% of In into A1GaN. Maximally efficient emission was obtained at 318 nm from the fabricated In[sub 0.05]Al[sub 0.34]Ga[sub 0.61]N/In[sub 0.02]Al[sub 0.60]Ga[sub 0.38]N three-layer MQW when the QW thickness was approximately 1.4 nm. The intensity of 320 nm band emission from the InA1GaN-based MQWs was as strong as that of 410 nm band emission from InGaN-based QWs at RT. We observed emission fluctuations of submicron size in cathode luminescence images of In[sub x1]Al[sub y1]Ga[sub l -x1-y1]N/In[sub x2]Al[sub y2]Ga[sub l-x2-y2]N single QW which might be due to In segregation effect. The temperature dependence of photoluminescence emission for InA1GaN-based QWs was greatly improved in comparison with that of GaN- or A1GaN-based QWs.


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