Deep-level defect characteristics in pentacene organic thin films

Yang, Yong Suk; Kim, Seong Hyun; Lee, Jeong-Ik; Chu, Hye Yong; Do, Lee-Mi; Lee, Hyoyoung; Oh, Jiyoung; Zyung, Taehyoung; Ryu, Min Ki; Jang, Min Su
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1595
Academic Journal
Organic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm²/V s and the grains larger than 1 µm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the capacitance properties were measured in the metal/insulator/organic semiconductor structure device by employing the capacitance-voltage and deep-level transient spectroscopy (DLTS) measurements. Based on the DLTS measurements, the concentrations and the energy levels of hole and electron traps in the obtained pentacene films were formed to be approximately 4.2 x 10[sup 15] cm[sup -3] at E[sub v]+0.24 eV, 9.6 x 10[sup 14] cm[sup -3] at E[sub v] + 1.08 eV, 6.5 x 10[sup 15] cm[sup -3] at E[sub v]+0.31 eV and 2.6x 10[sup 14] cm[sup -3] at E[sub c] - 0.69 eV.


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