TITLE

Deep-level defect characteristics in pentacene organic thin films

AUTHOR(S)
Yang, Yong Suk; Kim, Seong Hyun; Lee, Jeong-Ik; Chu, Hye Yong; Do, Lee-Mi; Lee, Hyoyoung; Oh, Jiyoung; Zyung, Taehyoung; Ryu, Min Ki; Jang, Min Su
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1595
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm²/V s and the grains larger than 1 µm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the capacitance properties were measured in the metal/insulator/organic semiconductor structure device by employing the capacitance-voltage and deep-level transient spectroscopy (DLTS) measurements. Based on the DLTS measurements, the concentrations and the energy levels of hole and electron traps in the obtained pentacene films were formed to be approximately 4.2 x 10[sup 15] cm[sup -3] at E[sub v]+0.24 eV, 9.6 x 10[sup 14] cm[sup -3] at E[sub v] + 1.08 eV, 6.5 x 10[sup 15] cm[sup -3] at E[sub v]+0.31 eV and 2.6x 10[sup 14] cm[sup -3] at E[sub c] - 0.69 eV.
ACCESSION #
6220561

 

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