Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO[sub 2]

Lo´pez, M.; Garrido, B.; Garcı´a, C.; Pellegrino, P.; Pe´rez-Rodrı´guez, A.; Morante, J. R.; Bonafos, C.; Carrada, M.; Claverie, A.
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1637
Academic Journal
The ability of surface passivation to enhance the photoluminescence (PL) emission of Si nanocrystals in SiO[sub 2] has been investigated. No significant increase of the average nanocrystal size has been detected for annealings at 1100 °C between 1 min and 16 h. In contrast, the PL intensity steadily increases and reaches saturation after 3-4 h of annealing time. Such behavior shows an inverse correlation with the amount of Si dangling bonds (P[sub b] centers) at the interface between Si nanocrystals and the SiO[sub 2] matrix. A postannealing at 450 °C in forming gas enhances the PL intensity and lifetime, due to a reduction in P[sub b] concentration, without modifying the spectral shape of the PL emission.


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