TITLE

Room-temperature single-electron charging in electrochemically synthesized semiconductor quantum dot and wire array

AUTHOR(S)
Kouklin, N.; Menon, L.; Bandyopadhyay, S.
PUB. DATE
March 2002
SOURCE
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1649
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cylindrical quantum dots of diameter ∼8 nm and height 3-10 nm, and wires of diameter 50 nm and height 500-1000 nm, were self-assembled by electrodepositing semiconductors in the nanometer-sized pores of anodic alumina films. Current-voltage characteristics of both wires and dots show Coulomb blockade at room temperature, while the wires also show a Coulomb staircase when exposed to infrared radiation. These results establish that electrochemical self-assembly is a viable technique for producing nanostructures that have potential uses in room-temperature single electronics.
ACCESSION #
6220542

 

Related Articles

  • Coulomb Oscillations of the Ballistic Conductance in a Quasi-One-Dimensional Quantum Dot. Tkachenko, V. A.; Baksheyev, D. G.; Tkachenko, O. A.; Liang, C.-T. // JETP Letters;8/25/2001, Vol. 74 Issue 4, p209 

    It is demonstrated that localized states of an open quasi-one-dimensional quantum dot can be charged by the Coulomb blockade mechanism. A new effect—Coulomb oscillations of the ballistic conductance—is observed because of the high sensitivity of the ballistic current to...

  • Evolution of Coulomb blockade spectra in parallel coupled quantum dots. Adourian, A.S.; Livermore, C.; Westervelt, R.M.; Campman, K.L.; Gossard, A.C. // Applied Physics Letters;7/19/1999, Vol. 75 Issue 3, p424 

    Discusses the evolution of Coulomb blockade spectra in parallel coupled quantum dots in the two-dimensional gas of a gallium arsenide/aluminum gallium arsenide heterostructure. Occurrence of two distinct sets of secondary conductance peaks; Theories regarding role of interdot quantum charge...

  • 1/Q Expansion for the Energy Spectrum of Quantum Dots. Lozovik, Yu. E.; Mur, V. D.; Narozhnyi, N. B. // Journal of Experimental & Theoretical Physics;May2003, Vol. 96 Issue 5, p932 

    Abstract-A new method is proposed for calculating the energy spectrum and the wave functions of N-electron quantum dots with an arbitrary confining potential. The method consists in expansion with respect to a dimensionless quantum parameter 1/Q, which is expressed in terms of the ratio of the...

  • Spin-polarized transport through two quantum dots Interference and Coulomb correlation effects. TROCHA, P.; BARNAŚ, J. // Materials Science (0137-1339);2008, Vol. 26 Issue 3, p707 

    Electronic transport through two single-level quantum dots attached in parallel to ferromagnetic leads has been analyzed theoretically. The intra-dot Coulomb correlation was taken into account, while the inter-dot hopping and Coulomb repulsion have been neglected. The dots, however, may interact...

  • Mechanisms of Auger recombination in semiconducting quantum dots. Zegrya, G. G.; Samosvat, D. M. // Journal of Experimental & Theoretical Physics;Jul2007, Vol. 104 Issue 6, p951 

    Microscopic calculation of the probability of Auger recombination of charge carriers localized in a semiconducting quantum dot (QD) is carried out. It is shown that two mechanism of Auger recombination (nonthreshold and quasi-threshold) operate in the QD. The nonthreshold Auger recombination...

  • Simple one-dimensional model for electronic structure calculation of unbiased and biased silicon quantum dots in Coulomb blockade applications. Sée, Johann; Dollfus, Philippe; Galdin, Sylvie; Hesto, Patrice // Journal of Applied Physics;10/15/2003, Vol. 94 Issue 8, p5053 

    This article presents a simple one-dimensional (1D) model of electronic structure calculation able to treat quantum dots (QDs) under bias voltage. With a view to investigating complex Coulomb blockade devices with multiple QDs, this model aims at providing accurate information on the QD...

  • Many-Electron Coulomb Correlations in Hopping Transport along Layers of Quantum Dots. Yakimov, A. I.; Nenashev, A. V.; Dvurechenski&ibreve;, A. V.; Timonova, M. N. // JETP Letters;8/25/2003, Vol. 78 Issue 4, p241 

    Experimental data are analyzed on the hopping transport of holes in two-dimensional layers of Ge/Si(001) quantum dots (QDs) under conditions of the long-range Coulomb interaction of charge carriers localized in QDs, when the temperature dependence of the conductivity obeys the...

  • Multiple resonances and Coulomb blockade splitting in a quantum dot-DNA composite. Go, A.; Jeon, G.; Yi, J. // European Physical Journal B -- Condensed Matter;May2011, Vol. 81 Issue 1, p127 

    Inspired by the recent realizations of quantum dot (QD)-DNA conjugation, we study the spectral density of a magnetic impurity coupled to a mesoscopic semiconducting host. Using a combination of exact diagonalization technique and an analytic approach, we demonstrate that various types of...

  • Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers. Pooley, D. M.; Ahmed, H.; Mizuta, H.; Nakazato, K. // Journal of Applied Physics;11/1/2001, Vol. 90 Issue 9, p4772 

    Electron transport in silicon nanopillars has been studied for pillars with zero, one, or two silicon nitride barrier layers of 2 nm thickness. Evidence of Coulomb blockade is presented and the role of the silicon nitride layers is discussed. Wide zero current regions are observed for some...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics