Band-gap profiling in amorphous silicon–germanium solar cells

Lundszien, Dietmar; Finger, Friedhelm; Wagner, Heribert
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1655
Academic Journal
Profiled buffer layers at the interfaces of amorphous silicon-germanium (a-SiGe:H) solar cells are routinely used to avoid band-gap discontinuities and high-defect densities at the p/i and i/n interfaces. It is shown that such profiled a-SiGe:H buffer layers can be replaced by a constant band-gap a-Si:H buffer, an inverse profiled a-SiGe:H buffer, or even a 3-nm-thin (δ) buffer at some distance away from the interface without losses in the open-circuit voltage V[sub OC] and fill factor while maintaining the same short current density j[sub SC]. In view of these results, common model assumptions for a-SiGe:H solar cells have to be revised.


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