Hole transport in polycrystalline pentacene transistors

Street, R. A.; Knipp, D.; Vo¨lkel, A. R.
March 2002
Applied Physics Letters;3/4/2002, Vol. 80 Issue 9, p1658
Academic Journal
Measurements of pentacene thin-film transistors are used to explore hole transport mechanisms. The grain-boundary barrier model does not account for the data, since no field dependence of the mobility is observed over a wide range of gate and drain voltages. Instead, trapping provides a more satisfactory qualitative and quantitative interpretation. The subthreshold characteristics are attributed to deep acceptors in the pentacene film, and the conclusions are supported by numerical modeling.


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