TITLE

A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films

AUTHOR(S)
Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V.; Liu, Yinghao; Smith, Arthur R.
PUB. DATE
May 2011
SOURCE
Review of Scientific Instruments;May2011, Vol. 82 Issue 5, p053703
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve <=5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn3N2(010) surfaces.
ACCESSION #
62010785

 

Related Articles

  • Atomic resolution ultrahigh vacuum scanning tunneling microscopy of epitaxial diamond (100) films. Stallcup, R.E.; Aviles, A.F. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2331 

    Presents an atomic resolution ultrahigh vacuum scanning tunneling microscopy of epitaxial diamond (100) films. Discovery of a (2 1) dimer surface reconstruction and amorphous atomic regions; Measurement of the (2 1) unit cell; Identification of the amorphous regions as amorphous carbon.

  • Ultrahigh vacuum, variable temperature, dual scanning tunneling microscope system operating under high magnetic field. Cai, Weiwei; Pang, Fei; Wang, Jian; Liu, Hui; Liang, X. J.; Xue, Q. K.; Chen, D. M. // Review of Scientific Instruments;Jun2007, Vol. 78 Issue 6, p065108 

    We present a dual scanning tunneling microscope (DSTM) system operating between 2.2 K and room temperature, in a split-coil superconducting magnetic field up to 12 T and in ultrahigh vacuum. The DSTM consists of two compact STMs, each having x, y, and z coarse positioning piezoelectric steppers...

  • A low-temperature high resolution scanning tunneling microscope with a three-dimensional magnetic vector field operating in ultrahigh vacuum. Mashoff, T.; Pratzer, M.; Morgenstern, M. // Review of Scientific Instruments;May2009, Vol. 80 Issue 5, p053702 

    We present a low-temperature ultrahigh vacuum (UHV) scanning tunneling microscope setup with a combination of a superconducting solenoid coil and two split-pair magnets, providing a rotatable magnetic field up to 500 mT applicable in all spatial directions. An absolute field maximum of B=7 T(3...

  • In situ scanning-tunneling-microscopy studies of current driven mass transport in Ag. Levine, L. E.; Reiss, G.; Smith, D. A. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5476 

    Presents the results of an ultrahigh vacuum scanning-tunneling-microscopy study of large scale mass transport in current carrying metal films. Factors that affect the mass transport process in real materials; Primary driving forces that can bias atomic motion in metal films; Electromigration...

  • Reconstructed silicon surfaces for calibration of scanning tunnel microscopes. Kuzin, A.; Todua, P.; Panov, V.; Oreshkin, A. // Measurement Techniques;Oct2012, Vol. 55 Issue 7, p773 

    The feasibility of using a reconstructed 7×7-Si(111) surface and monatomic steps on this surface as reference samples for calibration of ultrahigh vacuum scanning tunneling microscopes is demonstrated.

  • Regular stepped structures on clean Si(hhm)7×7 surfaces. Chaika, A. N.; Fokin, D. A.; Bozhko, S. I.; Ionov, A. M.; Debontridder, F.; Dubost, V.; Cren, T.; Roditchev, D. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    Regular single and triple step arrays with different periodicities have been fabricated in ultrahigh vacuum on clean Si(557) surfaces at various thermal treatment procedures. The atomic structure of the triple step staircases has been studied with high resolution scanning tunneling microscopy...

  • Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry. Cobet, C.; Schmidtling, T.; Drago, M.; Wollschläger, N.; Esser, N.; Richter, W.; Feenstra, R. M.; Kampen, T.U. // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6997 

    Spectroscopic ellipsometry is used to study GaN films during growth by metalorganic vapor phase epitaxy (MOVPE) in correlation to well known results of plasma-assisted molecular beam epitaxy (PAMBE). Results for the PAMBE reveal clear differences between growth under Ga-rich and N-rich...

  • Strong vortex pinning in FeSe0.5Te0.5 epitaxial thin film. Bellingeri, E.; Kawale, S.; Pallecchi, I.; Gerbi, A.; Buzio, R.; Braccini, V.; Palenzona, A.; Putti, M.; Adamo, M.; Sarnelli, E.; Ferdeghini, C. // Applied Physics Letters;2/20/2012, Vol. 100 Issue 8, p082601 

    We report on the magnetic field and angular dependence of the critical current density of epitaxial FeTe0.5Se0.5 thin films. The films exhibit high critical current values and weak dependence on the applied magnetic field. The Jc is larger for field parallel to the c-axis, which is the opposite...

  • Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers. Weidlich, P. H.; Schnedler, M.; Eisele, H.; Dunin-Borkowski, R. E.; Ebert, Ph. // Applied Physics Letters;9/30/2013, Vol. 103 Issue 14, p142105 

    The spatial distribution and the projected line directions of dislocations intersecting a cross-sectional [formula] cleavage plane of a GaN(0001) epitaxial layer is mapped using scanning tunneling microscopy. The data is correlated with the spatial positions of v-shaped defects. The dislocations...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics