High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation

Walter, G.; Chung, T.; Holonyak, N.
February 2002
Applied Physics Letters;2/18/2002, Vol. 80 Issue 7, p1126
Academic Journal
Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs--GaAs--InGaAs--InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strained-layer InGaAs quantum wells (QWs) to the single InAs QD layer to assist carrier collection and thermalization. A QW-assisted single-layer InAs QD laser, a QD+QW laser, is demonstrated that operates cw (300 K), and at diode length 150 μm in pulsed operation exhibits gain as high as ∼100 cm[SUP -1].


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